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74HC125DR2G

Onsemi

74HC125DR2G by Onsemi

74HC125DR2G by Onsemi is a CMOS bus driver with 4 functions, 27 ns propagation delay, and 3-STATE output. It operates at -55 to 125 °C, has a supply voltage range of 2-6 V, and is ideal for military-grade applications requiring fast signal transmission in small outline packages.

Median Price

$0.119

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

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Rochester

USA . 180 parts In-Stock

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$0.119

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$0.099

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$0.088

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Digiode

USA . 2,193 parts In-Stock

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Velocity Electronics

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Inventory MP

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Bristol Electronics

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Prism Electronics

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Corphita

USA . 805 parts In-Stock

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$0.088

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Corohmni

South Africa . 71 parts In-Stock

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AZTECH Wire

Italy . 670 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Problanco Electronics

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Microchip USA

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Northwest PG Solutions

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Metaverse IC Inc.

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GreenTree Electronics

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Overview

Unleash the power of seamless data transmission with the 74HC125DR2G by Onsemi! As a leading manufacturer in the industry, Onsemi delivers top-notch quality and reliability in their Bus Driver & Transceivers category. Perfect for a wide range of applications, this product offers unmatched value and benefits to customers. Experience faster propagation delays, efficient power supplies, and versatile output characteristics without compromising on quality. Elevate your projects with the 74HC125DR2G and discover a whole new level of performance and efficiency!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the product.

Propagation Delay At Nominal Supply: 27 ns

Ensures fast and efficient signal transmission within the bus driver & transceivers.

Surface Mount: YES

Allows for easy installation and integration into PCBs.

No. of Functions: 4

Offers versatility and capability for handling multiple tasks or functions.

Nominal Supply Voltage / Vsup (V): 3

Suitable for applications requiring a 3V power supply.

Load Capacitance (CL): 50 pF

Helps in managing the load capacitance effectively for stable operation.

Power Supplies (V): 2/6

Supports a range of power supply voltages for flexibility in different applications.

No. of Terminals: 14

Sufficient terminals for connecting to other components or devices.

Maximum I (ol): 6 Amp

Capable of handling high output currents for demanding applications.

Propagation Delay (tpd): 135 ns

Provides an acceptable delay for signal propagation in the circuit.

Output Characteristics: 3-STATE

Allows for multiple output states, enhancing flexibility in signal control.

Minimum Operating Temperature: -55 °C

Suitable for operation in harsh environments with low temperatures.

Technology: CMOS

Employs CMOS technology for low power consumption and high noise immunity.

Technical Specifications

Bus Driver & Transceivers 74HC125DR2G attributes and parameters. Explore more Bus Driver & Transceivers devices from Onsemi

Specs

Control Type:

ENABLE LOW

Family:

HC/UH

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e3

Length:

8.65 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

6 Amp

Moisture Sensitivity Level (MSL):

1

No. of Bits:

1

No. of Functions:

4

No. of Ports:

2

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

3-STATE

Output Polarity:

TRUE

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP14,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

2/6

Propagation Delay At Nominal Supply:

27 ns

Propagation Delay (tpd):

135 ns

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Sub-Category:

Bus Driver/Transceivers

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

3.9 mm

Trade Compliance

74HC125DR2G Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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