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3EZ10D5G

Onsemi

3EZ10D5G by Onsemi

The Onsemi 3EZ10D5G Zener Diode has a nominal reference voltage of 10V, max power dissipation of 1W, and working test current of 75mA. It is ideal for applications requiring precise voltage regulation in electronic circuits due to its low dynamic impedance and high temperature tolerance up to 175 °C.

Median Price

$0.159

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 45 parts In-Stock

1+ parts

-

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$0.159

1k+ parts

$0.132

10k+ parts

$0.117

45

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$0.159

$0.132

$0.117

Distributors (In-Stock)

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Digiode

USA . 1,677 parts In-Stock

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$0.124

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$0.124

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Vyrian

USA . 5,450 parts In-Stock

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5,450

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Distributors (Availability)

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Corohmni

South Africa . 296 parts In-Stock

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$0.080

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296

$0.080

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Corphita

USA . 2,299 parts In-Stock

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$0.117

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$0.117

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Component Stockers USA

USA . 975 parts In-Stock

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$0.130

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$0.130

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$0.110

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975

$0.130

$0.130

$0.110

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Advanced Electronics

New Zealand . 350 parts In-Stock

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$0.192

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$0.175

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$0.157

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350

$0.192

$0.175

$0.157

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AZTECH Wire

Italy . 688 parts In-Stock

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$20.510

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$20.510

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Native Components

USA . 87 parts In-Stock

1+ parts

$92.145

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$88.459

87

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$88.459

Northwest PG Solutions

USA . 1,981 parts In-Stock

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$101.359

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Kulean Microsystems

USA . 5,900 parts In-Stock

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Problanco Electronics

Mexico . 4,155 parts In-Stock

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TANS Electronics

Latvia . 3,253 parts In-Stock

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SupplyDigital Components

Austria . 2,226 parts In-Stock

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UHIMA Technologies

Türkiye . 15 parts In-Stock

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Overview

Unleash the power of precision with the Onsemi 3EZ10D5G Zener Diode. Crafted by a trusted manufacturer, this single-config diode offers superior quality and reliability for a wide range of applications. With a nominal reference voltage of 10V and maximum power dissipation of 1W, this diode ensures optimal performance in various scenarios. Experience peace of mind with a maximum voltage tolerance of 5% and maximum operating temperature of 175 °C. Trust in the 3EZ10D5G to deliver unmatched value and efficiency for your electronic projects.

Feature Benefit Bullets

Working Test Current: 75 mA

Having a high working test current of 75 mA ensures that this Zener diode can handle a decent amount of power without getting damaged, making it suitable for various applications.

Maximum Voltage Tolerance: 5 %

The low maximum voltage tolerance of 5% ensures consistent and accurate voltage regulation, making this Zener diode reliable in maintaining a stable voltage output.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature of 175 °C, this Zener diode can function effectively even in high-temperature environments, enhancing its reliability and durability.

Maximum Dynamic Impedance: 3.5 ohm

The low maximum dynamic impedance of 3.5 ohms helps minimize the impedance variation, ensuring a stable voltage output and improved performance of this Zener diode.

Terminal Finish: TIN

The TIN terminal finish provides good conductivity and corrosion resistance, enhancing the longevity and reliability of this Zener diode.

Maximum Power Dissipation: 1 W

With a high maximum power dissipation of 1 watt, this Zener diode can handle moderate power levels efficiently, making it suitable for various power management applications.

Peak Reflow Temperature °C: 260

The high peak reflow temperature of 260 °C ensures that this Zener diode can withstand the soldering process during assembly, making it easy to integrate into electronic circuits.

Nominal Reference Voltage: 10 V

The nominal reference voltage of 10 volts provides a stable voltage reference for regulation and protection in electronic circuits, making this Zener diode an ideal choice for voltage regulation applications.

Technical Specifications

Zener Diodes 3EZ10D5G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Type:

Maximum Dynamic Impedance:

3.5 ohm

JESD-609 Code:

e3

No. of Elements:

1

Maximum Operating Temperature:

175 Cel

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

1 W

Nominal Reference Voltage:

10 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

NO

Terminal Finish:

TIN

Maximum Voltage Tolerance:

5 %

Working Test Current:

75 mA

Trade Compliance

3EZ10D5G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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