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1SMF16BT3G

Onsemi

1SMF16BT3G by Onsemi

1SMF16BT3G by Onsemi is a Zener diode with a breakdown voltage range of 16.7V to 18.5V, offering unidirectional polarity and a clamping voltage of 26V. With a max power dissipation of 175W, it is ideal for transient suppression applications in electronics requiring surface mount technology.

Median Price

$0.157

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 150,000 parts In-Stock

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$0.143

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$0.143

Verical

USA . 140,000 parts In-Stock

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$0.171

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$0.171

Distributors (In-Stock)

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Digiode

USA . 810 parts In-Stock

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$0.144

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810

$0.144

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Vyrian

USA . 8,575 parts In-Stock

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Tectiva GmbH

Germany . 600 parts In-Stock

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600

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Distributors (Availability)

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Corphita

USA . 2,087 parts In-Stock

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$0.137

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2,087

$0.137

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Corohmni

South Africa . 280 parts In-Stock

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$0.143

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280

$0.143

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Native Components

USA . 87 parts In-Stock

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$12.130

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87

$12.130

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Northwest PG Solutions

USA . 878 parts In-Stock

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$13.343

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$12.009

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878

$13.343

$12.009

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AZTECH Wire

Italy . 339 parts In-Stock

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$22.160

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339

$22.160

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Continental Prestige Electronics

USA . 150,000 parts In-Stock

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$0.130

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Kepictronics

USA . 34,579 parts In-Stock

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34,579

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Metaverse IC Inc.

Canada . 28,057 parts In-Stock

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SupplyDigital Components

Austria . 5,657 parts In-Stock

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Problanco Electronics

Mexico . 3,630 parts In-Stock

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3,630

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Glotronic Ltd.

UK . 2,780 parts In-Stock

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2,780

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TANS Electronics

Latvia . 926 parts In-Stock

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Kulean Microsystems

USA . 586 parts In-Stock

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UHIMA Technologies

Türkiye . 580 parts In-Stock

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580

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Overview

Looking for reliable transient suppression devices? Look no further than the 1SMF16BT3G by Onsemi. With a focus on quality and innovation, Onsemi delivers top-of-the-line products like this one, designed to provide superior protection for your electronic circuits. Ideal for a wide range of applications, this single-config transient suppression device offers peace of mind with its high peak reverse power dissipation and nominal breakdown voltage. Trust Onsemi to deliver value, benefits, and advantages with every product they offer.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protects internal components from external elements, ensuring a longer lifespan.

Config: SINGLE

Simplifies installation and maintenance as only one device needs to be handled.

Surface Mount: YES

Allows for easy and space-efficient integration onto circuit boards.

Nominal Breakdown Voltage: 17.6 V

Provides reliable protection by activating at the optimal voltage threshold.

Terminal Finish: TIN

Enhances conductivity and prevents corrosion for efficient performance.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Specifically designed for transient suppression, ensuring effective safeguarding against voltage spikes.

Technology: ZENER

Utilizes Zener diode technology for accurate voltage regulation and high-performance transient suppression.

Maximum Clamping Voltage: 26 V

Limits the peak voltage across the protected circuit to prevent damage to sensitive components.

Technical Specifications

Transient Suppression Devices 1SMF16BT3G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

18.5 V

Minimum Breakdown Voltage:

16.7 V

Nominal Breakdown Voltage:

17.6 V

Maximum Clamping Voltage:

26 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Reverse Power Dissipation:

175 W

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

16 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

1SMF16BT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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