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1SMF16BT1

Onsemi

1SMF16BT1 by Onsemi

1SMF16BT1 by Onsemi is a Zener diode with 175W power dissipation, 17.6V breakdown voltage, and 26V clamping voltage. Ideal for transient suppression in electronics applications due to its unidirectional polarity and small outline package style.

Median Price

$0.172

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 5,973 parts In-Stock

1+ parts

-

100+ parts

$0.185

1k+ parts

$0.153

10k+ parts

$0.137

5,973

-

$0.185

$0.153

$0.137

DigiKey

USA . 5,973 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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$0.160

5,973

-

-

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$0.160

Farnell

UK . 5,973 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.143

5,973

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-

-

$0.143

Verical

USA . 5,973 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.192

5,973

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-

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$0.192

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 361 parts In-Stock

1+ parts

$0.143

100+ parts

-

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361

$0.143

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Digiode

USA . 462 parts In-Stock

1+ parts

$0.144

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462

$0.144

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,192 parts In-Stock

1+ parts

$0.137

100+ parts

-

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1,192

$0.137

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Corohmni

South Africa . 175 parts In-Stock

1+ parts

$0.143

100+ parts

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175

$0.143

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Native Components

USA . 939 parts In-Stock

1+ parts

$5.950

100+ parts

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939

$5.950

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Kulean Microsystems

USA . 7,836 parts In-Stock

1+ parts

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7,836

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Problanco Electronics

Mexico . 7,404 parts In-Stock

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7,404

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Continental Prestige Electronics

USA . 5,973 parts In-Stock

1+ parts

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100+ parts

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$0.130

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5,973

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$0.130

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TANS Electronics

Latvia . 3,786 parts In-Stock

1+ parts

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3,786

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SupplyDigital Components

Austria . 1,912 parts In-Stock

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1,912

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UHIMA Technologies

Türkiye . 851 parts In-Stock

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851

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Northwest PG Solutions

USA . 173 parts In-Stock

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$5.831

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173

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$5.831

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Overview

Looking for reliable transient suppression devices to protect your electronic circuits? Look no further than the 1SMF16BT1 by Onsemi. Manufactured with top-quality materials and advanced technology, this single configuration device offers maximum non-repetitive peak reverse power dissipation of 175W and a nominal breakdown voltage of 17.6V. With its small outline package style, dual terminals, and unidirectional polarity, this Zener diode type product provides superior protection against voltage spikes. Trust Onsemi to deliver exceptional quality and performance in every application. Upgrade your circuit protection today with the 1SMF16BT1!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material for the package body ensures durability and reliability of the product, making it suitable for various applications.

Config: SINGLE

Single configuration simplifies installation and maintenance of the transient suppression device, making it user-friendly.

Surface Mount: YES

Surface mount capability enables easy and efficient integration of the device onto circuit boards, saving valuable space in electronic designs.

Maximum Non Repetitive Peak Reverse Power Dissipation: 175 W

High power dissipation capacity ensures effective protection against transient voltages and spikes, enhancing the reliability of the connected electronic components.

Nominal Breakdown Voltage: 17.6 V

The nominal breakdown voltage helps to clamp overvoltage spikes to a safe level, safeguarding sensitive electronic devices from damage.

Package Shape: RECTANGULAR

Rectangular package shape allows for easy placement and mounting of the device in electronic circuits, enhancing overall system efficiency.

No. of Terminals: 2

Having only 2 terminals simplifies the connection process, reducing the risk of wiring errors and improving overall system reliability.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the circuit board, making it suitable for compact electronic designs.

Terminal Finish: TIN

Tin terminal finish provides good electrical conductivity and corrosion resistance, ensuring long-term performance of the device.

Terminal Position: DUAL

Dual terminal position allows for flexibility in wiring connections, accommodating different circuit layouts and configurations.

Minimum Breakdown Voltage: 16.7 V

The minimum breakdown voltage ensures reliable protection against transient overvoltages, enhancing the safety of connected electronic equipment.

Peak Reflow Temperature °C: 260

High peak reflow temperature capability allows for safe and efficient soldering during assembly, ensuring product integrity and performance.

Maximum Breakdown Voltage: 18.5 V

The maximum breakdown voltage sets a limit on the level of overvoltage protection offered by the device, preventing damage to sensitive components.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Utilizing Trans Voltage Suppressor Diode technology, the device effectively suppresses transient voltage spikes, safeguarding connected circuits from damage.

Technology: ZENER

Zener technology ensures stable and reliable voltage regulation, protecting connected devices from overvoltage conditions and ensuring system longevity.

Terminal Form: FLAT

Flat terminal form facilitates easy soldering and connectivity, ensuring strong and reliable electrical connections in the circuit.

Maximum Repetitive Peak Reverse Voltage: 16 V

The maximum repetitive peak reverse voltage specification indicates the device's ability to handle continuous transient voltage events without compromising performance.

Polarity: UNIDIRECTIONAL

Unidirectional polarity ensures that the device only conducts in one direction, offering effective protection against transient overvoltages in specific applications.

Maximum Clamping Voltage: 26 V

The maximum clamping voltage specification defines the peak voltage level that the device can withstand, providing reliable overvoltage protection for connected circuits.

Diode Element Material: SILICON

Utilizing silicon as the diode element material ensures high conductivity, low noise, and consistent performance of the transient suppression device for reliable protection.

Technical Specifications

Transient Suppression Devices 1SMF16BT1 attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

18.5 V

Minimum Breakdown Voltage:

16.7 V

Nominal Breakdown Voltage:

17.6 V

Maximum Clamping Voltage:

26 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

175 W

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

16 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

1SMF16BT1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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