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1SMF16BT3

Onsemi

1SMF16BT3 by Onsemi

1SMF16BT3 by Onsemi is a Zener technology Trans Voltage Suppressor Diode with a max clamping voltage of 26V. It has a breakdown voltage of 17.6V and can handle up to 175W non-repetitive peak reverse power dissipation. Ideal for transient suppression in electronic circuits.

Median Price

$0.110

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 470,000 parts In-Stock

1+ parts

-

100+ parts

$0.119

1k+ parts

$0.099

10k+ parts

$0.088

470,000

-

$0.119

$0.099

$0.088

Farnell

UK . 470,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.092

470,000

-

-

-

$0.092

Verical

USA . 380,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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$0.110

380,000

-

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-

$0.110

Distributors (In-Stock)

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Nova Conductors

Japan . 96 parts In-Stock

1+ parts

$0.087

100+ parts

-

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96

$0.087

-

-

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Digiode

USA . 141 parts In-Stock

1+ parts

$0.093

100+ parts

-

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141

$0.093

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Vyrian

USA . 8,893 parts In-Stock

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8,893

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VNN

France . 2,923 parts In-Stock

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2,923

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 469,968 parts In-Stock

1+ parts

$0.078

100+ parts

-

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469,968

$0.078

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Corohmni

South Africa . 132 parts In-Stock

1+ parts

$0.085

100+ parts

-

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132

$0.085

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Netroflash

USA . 1,000 parts In-Stock

1+ parts

$0.087

100+ parts

-

1k+ parts

$0.083

10k+ parts

$0.081

1,000

$0.087

-

$0.083

$0.081

Corphita

USA . 1,957 parts In-Stock

1+ parts

$0.088

100+ parts

-

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1,957

$0.088

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AZTECH Wire

Italy . 765 parts In-Stock

1+ parts

$11.720

100+ parts

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765

$11.720

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Problanco Electronics

Mexico . 7,179 parts In-Stock

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7,179

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TANS Electronics

Latvia . 6,965 parts In-Stock

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6,965

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SupplyDigital Components

Austria . 5,771 parts In-Stock

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5,771

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Kulean Microsystems

USA . 3,314 parts In-Stock

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3,314

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UHIMA Technologies

Türkiye . 4 parts In-Stock

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4

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Overview

Looking for reliable transient suppression devices? Look no further than the 1SMF16BT3 by Onsemi. With a reputation for high-quality products, Onsemi delivers top-of-the-line solutions for various applications. This single-configured diode offers maximum protection with a nominal breakdown voltage of 17.6V and a maximum clamping voltage of 26V. Trust Onsemi to provide the value, benefits, and advantages you need for all your electronic needs. Choose the 1SMF16BT3 for peace of mind and superior performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this product lightweight and durable, ideal for various applications.

Config: SINGLE

The single configuration simplifies installation and maintenance, making this product user-friendly and cost-effective.

Surface Mount: YES

The surface mount option allows for easy integration onto PCBs, saving space and reducing assembly time.

Maximum Non Repetitive Peak Reverse Power Dissipation: 175 W

With a high power dissipation capacity, this product can effectively protect against voltage spikes and surges in electronic circuits.

Nominal Breakdown Voltage: 17.6 V

The nominal breakdown voltage ensures reliable protection against overvoltage conditions in the circuit.

Package Shape: RECTANGULAR

The rectangular package shape provides stability and ease of mounting, enhancing the overall performance of the product.

No. of Terminals: 2

The two terminals offer a simple and secure connection, ensuring the product is properly installed and functioning.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and allows for efficient utilization of PCB real estate.

Terminal Finish: TIN

The tin terminal finish improves conductivity and corrosion resistance, ensuring a reliable connection in the circuit.

Terminal Position: DUAL

The dual terminal position offers flexibility in installation, allowing for optimal placement in the circuit.

Minimum Breakdown Voltage: 16.7 V

The minimum breakdown voltage provides a safety margin in protecting sensitive components from overvoltage conditions.

Peak Reflow Temperature °C: 260

The high peak reflow temperature enables the product to withstand the soldering process during assembly without degradation.

Maximum Breakdown Voltage: 18.5 V

The maximum breakdown voltage ensures protection against higher voltage transients, enhancing the overall reliability of the product.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The use of transient voltage suppressor diode technology provides fast and effective suppression of voltage spikes, safeguarding the circuit.

Technology: ZENER

The Zener technology allows for precise voltage regulation and reliable overvoltage protection in the circuit.

Terminal Form: FLAT

The flat terminal form ensures a secure connection and ease of soldering during installation, enhancing the product's overall performance.

Maximum Repetitive Peak Reverse Voltage: 16 V

The maximum repetitive peak reverse voltage rating ensures continuous protection against voltage fluctuations in the circuit.

Polarity: UNIDIRECTIONAL

The unidirectional polarity ensures that voltage spikes are efficiently clamped in one direction, safeguarding the circuit components.

Maximum Clamping Voltage: 26 V

The maximum clamping voltage limits the voltage level across the circuit, preventing damage to sensitive electronic components.

Diode Element Material: SILICON

The use of silicon diode element material ensures high performance and reliability in suppressing voltage transients.

Technical Specifications

Transient Suppression Devices 1SMF16BT3 attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

18.5 V

Minimum Breakdown Voltage:

16.7 V

Nominal Breakdown Voltage:

17.6 V

Maximum Clamping Voltage:

26 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

175 W

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

16 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

1SMF16BT3 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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