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1N5999B

Onsemi

1N5999B by Onsemi

1N5999B by Onsemi is a Zener diode with 9.1V nominal voltage, 5% voltage tolerance, and 10 ohm dynamic impedance. Ideal for applications requiring stable voltage regulation in circuits with a max power dissipation of 0.5W at temperatures up to 200°C.

Median Price

$3.300

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Microchip Technology

USA . 269 parts In-Stock

1+ parts

$3.300

100+ parts

-

1k+ parts

-

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269

$3.300

-

-

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Mouser Electronics

USA . 243 parts In-Stock

1+ parts

$3.300

100+ parts

$3.060

1k+ parts

-

10k+ parts

-

243

$3.300

$3.060

-

-

Rochester

USA . 21,182 parts In-Stock

1+ parts

-

100+ parts

$2.950

1k+ parts

$2.640

10k+ parts

$2.480

21,182

-

$2.950

$2.640

$2.480

Verical

USA . 20,000 parts In-Stock

1+ parts

-

100+ parts

$3.875

1k+ parts

$3.300

10k+ parts

$3.100

20,000

-

$3.875

$3.300

$3.100

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,440 parts In-Stock

1+ parts

$3.116

100+ parts

-

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2,440

$3.116

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Vyrian

USA . 1,574 parts In-Stock

1+ parts

$3.280

100+ parts

-

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1,574

$3.280

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NAC Semi

USA . 215 parts In-Stock

1+ parts

$3.470

100+ parts

$3.150

1k+ parts

$2.880

10k+ parts

-

215

$3.470

$3.150

$2.880

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 515 parts In-Stock

1+ parts

$0.146

100+ parts

-

1k+ parts

-

10k+ parts

$0.140

515

$0.146

-

-

$0.140

Northwest PG Solutions

USA . 1,841 parts In-Stock

1+ parts

$0.161

100+ parts

-

1k+ parts

-

10k+ parts

$0.142

1,841

$0.161

-

-

$0.142

Corphita

USA . 2,435 parts In-Stock

1+ parts

$2.952

100+ parts

-

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2,435

$2.952

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Component Stockers USA

USA . 239 parts In-Stock

1+ parts

$3.200

100+ parts

$2.970

1k+ parts

-

10k+ parts

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239

$3.200

$2.970

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Corohmni

South Africa . 293 parts In-Stock

1+ parts

$3.280

100+ parts

-

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293

$3.280

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Microchip USA

USA . 144 parts In-Stock

1+ parts

$20.480

100+ parts

$20.350

1k+ parts

$20.290

10k+ parts

$20.220

144

$20.480

$20.350

$20.290

$20.220

Metaverse IC Inc.

Canada . 168,000 parts In-Stock

1+ parts

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100+ parts

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168,000

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QUARKTWIN TECHNOLOGY LTD

USA . 26,590 parts In-Stock

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26,590

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Continental Prestige Electronics

USA . 21,182 parts In-Stock

1+ parts

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100+ parts

$3.930

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21,182

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$3.930

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Kulean Microsystems

USA . 8,374 parts In-Stock

1+ parts

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8,374

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West Coast Incorporated

USA . 7,515 parts In-Stock

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7,515

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TANS Electronics

Latvia . 3,986 parts In-Stock

1+ parts

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3,986

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Glotronic Ltd.

UK . 1,970 parts In-Stock

1+ parts

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1,970

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Supply Digital

USA . 998 parts In-Stock

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998

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SupplyDigital Components

Austria . 906 parts In-Stock

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906

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UHIMA Technologies

Türkiye . 532 parts In-Stock

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532

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Problanco Electronics

Mexico . 417 parts In-Stock

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417

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Overview

Discover the power of reliable performance with the 1N5999B Zener Diode by Onsemi. Crafted with precision and quality in mind, this diode offers unparalleled value and benefits to customers. From ensuring stable voltage regulation to protecting sensitive electronic components, this product is a must-have for a wide range of applications. Trust in Onsemi's reputation for excellence and invest in the 1N5999B for all your circuit protection needs.

Feature Benefit Bullets

Package Body Material: GLASS

Glass material provides good thermal and electrical insulation, ensuring reliable performance and durability.

Working Test Current: 5 mA

Suitable working test current for stable operation and accurate voltage regulation.

Maximum Voltage Tolerance: 5 %

High voltage tolerance ensures consistent output voltage under varying conditions.

Maximum Operating Temperature: 200 °C

Wide operating temperature range allows for use in various environments without performance degradation.

Nominal Reference Voltage: 9.1 V

Specific reference voltage of 9.1 V provides precise voltage regulation for your application.

Technical Specifications

Zener Diodes 1N5999B attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

10 ohm

JEDEC-95 Code:

DO-204AH

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Nominal Reference Voltage:

9.1 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

NO

Technology:

ZENER

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

5 %

Working Test Current:

5 mA

Trade Compliance

1N5999B Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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