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1N5951BRLG

Onsemi

1N5951BRLG by Onsemi

1N5951BRLG by Onsemi is a Zener diode with 120V nominal voltage, 5% max tolerance, and 3.1mA test current. It has a max power dissipation of 1W and operates up to 200 °C. Ideal for applications requiring precise voltage regulation in electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,148 parts In-Stock

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Digiode

USA . 2,077 parts In-Stock

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Native Components

USA . 418 parts In-Stock

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$0.892

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418

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Northwest PG Solutions

USA . 1,593 parts In-Stock

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$0.981

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$0.981

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AZTECH Wire

Italy . 310 parts In-Stock

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$8.650

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Kulean Microsystems

USA . 8,300 parts In-Stock

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SupplyDigital Components

Austria . 6,701 parts In-Stock

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TANS Electronics

Latvia . 4,659 parts In-Stock

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Problanco Electronics

Mexico . 1,311 parts In-Stock

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Corphita

USA . 607 parts In-Stock

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UHIMA Technologies

Türkiye . 201 parts In-Stock

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Corohmni

South Africa . 55 parts In-Stock

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Overview

Enhance your electronic projects with the 1N5951BRLG Zener Diode from Onsemi. Known for their superior quality and reliability, Onsemi products are trusted by professionals worldwide. This Zener diode is ideal for voltage regulation applications, providing a stable and consistent voltage output. With a maximum power dissipation of 1W and a nominal reference voltage of 120V, this diode offers exceptional performance and efficiency. Trust Onsemi to deliver top-notch components for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides good insulation and protection for the diode, ensuring durability and long-term reliability.

Working Test Current: 3.1 mA

Low working test current allows for efficient power consumption and prevents overheating, making it suitable for sensitive electronic circuits.

Maximum Voltage Tolerance: 5 %

Tight voltage tolerance ensures consistent and accurate voltage regulation, providing stable performance in various applications.

Maximum Power Dissipation: 1 W

High power dissipation capability allows the diode to handle higher power loads without failure, making it reliable for demanding environments.

Nominal Reference Voltage: 120 V

Specific nominal reference voltage simplifies circuit design and ensures precise voltage regulation, making it suitable for voltage stabilization applications.

Technical Specifications

Zener Diodes 1N5951BRLG attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

380 ohm

JEDEC-95 Code:

DO-41

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

1 W

Qualification:

Not Qualified

Nominal Reference Voltage:

120 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

NO

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

5 %

Working Test Current:

3.1 mA

Trade Compliance

1N5951BRLG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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