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1N5930BRLG

Onsemi

1N5930BRLG by Onsemi

1N5930BRLG by Onsemi is a Zener diode with 16V nominal voltage, 5% voltage tolerance, and 10 ohm dynamic impedance. It operates at up to 200 °C making it suitable for high-temperature applications in various electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 7,240 parts In-Stock

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Digiode

USA . 2,367 parts In-Stock

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Native Components

USA . 419 parts In-Stock

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$9.950

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Northwest PG Solutions

USA . 1,432 parts In-Stock

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$10.945

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$9.850

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AZTECH Wire

Italy . 399 parts In-Stock

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$12.300

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Component Stockers USA

USA . 567 parts In-Stock

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$99.990

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Problanco Electronics

Mexico . 7,997 parts In-Stock

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Kulean Microsystems

USA . 6,480 parts In-Stock

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SupplyDigital Components

Austria . 4,627 parts In-Stock

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TANS Electronics

Latvia . 4,574 parts In-Stock

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Corphita

USA . 1,451 parts In-Stock

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UHIMA Technologies

Türkiye . 374 parts In-Stock

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Corohmni

South Africa . 224 parts In-Stock

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Overview

Experience the superior quality and reliability of Onsemi with the 1N5930BRLG Zener Diode. This industry-leading component offers unmatched performance and precision in voltage regulation, making it ideal for a wide range of applications. From power supplies to automotive electronics, this single-config Zener diode ensures stable voltage levels and efficient operation. Trust Onsemi for cutting-edge technology and premium products that deliver value and peace of mind to our customers.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good protection for the diode, ensuring durability and reliability.

Working Test Current: 23.4 mA

Suitable for a wide range of applications where a Zener diode is needed.

Maximum Voltage Tolerance: 5 %

Ensures accurate and stable voltage regulation.

Maximum Operating Temperature: 200 °C

Capable of functioning in high temperature environments.

Maximum Power Dissipation: 1 W

Can handle higher power loads, making it versatile for various circuits.

Nominal Reference Voltage: 16 V

Provides a specific and stable voltage reference for circuits.

Technical Specifications

Zener Diodes 1N5930BRLG attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

10 ohm

JEDEC-95 Code:

DO-41

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

1 W

Qualification:

Not Qualified

Nominal Reference Voltage:

16 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

NO

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

5 %

Working Test Current:

23.4 mA

Trade Compliance

1N5930BRLG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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