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1N5334BG

Onsemi

1N5334BG by Onsemi

1N5334BG Zener diode by Onsemi has a nominal reference voltage of 3.6V, max power dissipation of 5W, and working test current of 350mA. It is used in applications requiring precise voltage regulation such as power supplies and voltage references.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

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Vyrian

USA . 6,555 parts In-Stock

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VNN

France . 3,433 parts In-Stock

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Digiode

USA . 2,276 parts In-Stock

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PAR Electronics

UK . 600 parts In-Stock

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Nova Conductors

Japan . 300 parts In-Stock

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Ampacity Inc.

Singapore . 217 parts In-Stock

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$1.010

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AZTECH Wire

Italy . 610 parts In-Stock

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TANS Electronics

Latvia . 5,958 parts In-Stock

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Bastille Electronics

Australia . 3,504 parts In-Stock

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SupplyDigital Components

Austria . 3,472 parts In-Stock

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Problanco Electronics

Mexico . 2,967 parts In-Stock

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Kulean Microsystems

USA . 2,323 parts In-Stock

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Corphita

USA . 523 parts In-Stock

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Corohmni

South Africa . 238 parts In-Stock

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UHIMA Technologies

Türkiye . 153 parts In-Stock

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Overview

Unlock the power of precision with the Onsemi 1N5334BG Zener Diode. Manufactured by a trusted industry leader, this diode offers unparalleled quality and reliability for a wide range of applications. Whether you're looking to regulate voltage in electronic circuits or protect sensitive components from overvoltage, this diode has got you covered. With a maximum operating temperature of 200°C and a peak power dissipation of 5W, you can trust that this diode will deliver exceptional performance when you need it most. Upgrade your projects today with the Onsemi 1N5334BG Zener Diode.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the diode lightweight and resistant to external elements, increasing its durability and reliability.

Working Test Current: 350 mA

With a high working test current capacity, this diode can handle heavy loads without getting damaged, ensuring stable performance in various applications.

Maximum Operating Temperature: 200 °C

The diode can operate at high temperatures without compromising its functionality, making it suitable for demanding environments.

Maximum Power Dissipation: 5 W

The diode can dissipate up to 5 watts of power, allowing it to handle high power applications effectively.

Nominal Reference Voltage: 3.6 V

The precise nominal reference voltage of 3.6 V ensures consistent performance and reliable voltage regulation in circuits.

Technical Specifications

Zener Diodes 1N5334BG attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

2.5 ohm

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

5 W

Qualification:

Not Qualified

Nominal Reference Voltage:

3.6 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

NO

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

5 %

Working Test Current:

350 mA

Trade Compliance

1N5334BG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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