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1N5234BTR

Onsemi

1N5234BTR by Onsemi

1N5234BTR by Onsemi is a Zener diode with a nominal reference voltage of 6.2V and max power dissipation of 0.5W. It operates at a max temperature of 200°C, making it suitable for applications requiring precise voltage regulation in high-temperature environments. With a working test current of 20mA and low dynamic impedance of 7 ohm, it is commonly used in electronic circuits for voltage stabilization.

Median Price

$0.041

Lifecycle Status

Suppliers In-Stock

38

In-Stock Inventory

1k+

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Arrow

USA . 2,469 parts In-Stock

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Adafruit Industries

USA . 100 parts In-Stock

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DigiKey

USA . 37,365 parts In-Stock

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Rochester

USA . 1,030,010 parts In-Stock

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Avnet

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Element14

Singapore . 30,991 parts In-Stock

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TTI

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Master Electronics

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Chip1Stop

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Verical

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Digiode

USA . 4,134 parts In-Stock

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Nova Conductors

Japan . 960 parts In-Stock

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IBS Electronics

USA . 32,558 parts In-Stock

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Component Electronics Inc.

Canada . 7,900 parts In-Stock

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Vyrian

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Semi Source

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Component Sense

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PC Components Company LLC

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Inventory MP

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Ampacity Inc.

Singapore . 483,069 parts In-Stock

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Semicontronic

India . 143,439 parts In-Stock

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Corohmni

South Africa . 316 parts In-Stock

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Advanced Electronics

New Zealand . 2,000 parts In-Stock

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Component Stockers USA

USA . 10,895 parts In-Stock

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Corphita

USA . 3,222 parts In-Stock

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Aranea Global

USA . 2,000 parts In-Stock

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Argo Parts USA

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Netroflash

USA . 3,000 parts In-Stock

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Aztec Data Supply Inc.

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Continental Prestige Electronics

USA . 12,875 parts In-Stock

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Perfect Parts

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Kepictronics

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QUARKTWIN TECHNOLOGY LTD

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Microchip USA

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Cyclops Electronics Ltd (Excess)

UK . 9,980 parts In-Stock

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RC Electronics

USA . 9,000 parts In-Stock

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TANS Electronics

Latvia . 7,266 parts In-Stock

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Authorized Procurement Solutions

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UNI Independent Distributors

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Kulean Microsystems

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Glotronic Ltd.

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Problanco Electronics

Mexico . 1,938 parts In-Stock

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Supply Digital

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UHIMA Technologies

Türkiye . 929 parts In-Stock

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SupplyDigital Components

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Overview

Experience the superior quality and reliability of Onsemi's 1N5234BTR Zener Diode. Ideal for a wide range of applications, this product offers unmatched performance and precision. With a reputation for excellence in the industry, Onsemi ensures that each component meets the highest standards of quality. Trust in the 1N5234BTR to deliver consistent results and provide the stability your project needs. Upgrade your electronics with this top-of-the-line Zener Diode and experience the difference today.

Feature Benefit Bullets

Package Body Material: GLASS

Glass material provides good heat dissipation and protection for the diode, ensuring better performance and longevity.

Working Test Current: 20 mA

The 20 mA working test current allows for reliable and stable performance under various load conditions.

Maximum Voltage Tolerance: 5 %

The 5% maximum voltage tolerance ensures accurate voltage regulation, making it suitable for precision electronic applications.

Maximum Operating Temperature: 200 °C

With a high maximum operating temperature of 200°C, this zener diode can withstand elevated temperatures without compromising performance.

Maximum Power Dissipation: 0.5 W

The 0.5 W maximum power dissipation rating allows for efficient power handling, making it suitable for various power supply and voltage regulation applications.

Nominal Reference Voltage: 6.2 V

The 6.2V nominal reference voltage provides precise voltage regulation, ideal for maintaining stable voltage levels in electronic circuits.

Technical Specifications

Zener Diodes 1N5234BTR attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

7 ohm

JEDEC-95 Code:

DO-35

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Nominal Reference Voltage:

6.2 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

NO

Technology:

ZENER

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

5 %

Working Test Current:

20 mA

Trade Compliance

1N5234BTR Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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