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PMFPB6532UP,115

NXP Semiconductors

PMFPB6532UP,115 by NXP Semiconductors

PMFPB6532UP,115 by NXP Semiconductors is a P-channel enhancement mode MOSFET designed for efficient power management. It supports a max drain current of 3.5 A and power dissipation of 8.3 W, operating up to 150 °C. Ideal for surface mount applications in various electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 2,812 parts In-Stock

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Digiode

USA . 1,371 parts In-Stock

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Anansix

USA . 428 parts In-Stock

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428

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One Stop Electronics

USA . 993 parts In-Stock

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$3.050

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993

$3.050

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Component Stockers USA

USA . 297 parts In-Stock

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$99.990

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297

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QUARKTWIN TECHNOLOGY LTD

USA . 26,206 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,165 parts In-Stock

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Kepictronics

USA . 3,500 parts In-Stock

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3,500

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UNI Independent Distributors

Spain . 673 parts In-Stock

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Microchip USA

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Corphita

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Overview

Unlock the power of innovation with the PMFPB6532UP,115 from NXP Semiconductors! This premium P-channel enhancement mode transistor combines exceptional quality and reliability, making it ideal for diverse applications in automotive, industrial, and consumer electronics. Experience enhanced efficiency and impressive performance that helps streamline your designs while reducing energy consumption. Trust NXP’s industry expertise to elevate your projects to new heights!

Feature Benefit Bullets

Polarity or Channel Type: P-CHANNEL

P-channel transistors are ideal for high-side switching applications, providing efficient control over loads.

Configuration: SINGLE

Single configuration simplifies circuit design by reducing complexity and space requirements in electronic designs.

Surface Mount: YES

Surface mount compatibility allows for compact PCB designs and enhances manufacturing efficiency.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation provides better off-state performance and lower power consumption during idle states.

Maximum Drain Current (Abs) (ID): 3.5 A

With a maximum drain current of 3.5 A, this transistor is capable of handling substantial loads efficiently.

Maximum Power Dissipation (Abs): 8.3 W

A power dissipation capability of 8.3 W allows for effective thermal management, making it suitable for various applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOSFET technology offers fast switching speeds and high input impedance, leading to improved efficiency in circuit design.

Maximum Operating Temperature: 150 °C

A maximum operating temperature of 150 °C ensures reliability and performance in high-temperature environments.

Technical Specifications

Other Function Transistors PMFPB6532UP,115 attributes and parameters. Explore more Other Function Transistors devices from NXP Semiconductors

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

3.5 A

Maximum Drain Current (ID):

3.5 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Trade Compliance

PMFPB6532UP,115 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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