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PMFPB6545UP,115

NXP Semiconductors

PMFPB6545UP,115 by NXP Semiconductors

PMFPB6545UP,115 by NXP Semiconductors is a P-channel enhancement mode MOSFET designed for efficient power management. It supports a max drain current of 3.5 A and power dissipation of 8.3 W, making it ideal for compact electronic applications. With a high operating temp of 150 °C, it's perfect for demanding environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 3,932 parts In-Stock

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3,932

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Vyrian

USA . 3,536 parts In-Stock

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3,536

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Anansix

USA . 2,319 parts In-Stock

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2,319

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One Stop Electronics

USA . 1,139 parts In-Stock

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$4.050

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$4.050

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UNI Independent Distributors

Spain . 3,892 parts In-Stock

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3,892

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Corphita

USA . 3,349 parts In-Stock

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3,349

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Microchip USA

USA . 248 parts In-Stock

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248

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Overview

Unlock unparalleled performance with the PMFPB6545UP,115 from NXP Semiconductors. This premium P-channel transistor delivers exceptional efficiency and reliability, making it ideal for a wide range of applications, from power management to signal switching. With NXP's renowned commitment to quality and innovation, you can trust that this component will enhance your designs, streamline processes, and drive success in your next project—empowering you to achieve more with less effort.

Feature Benefit Bullets

Polarity or Channel Type: P-CHANNEL

P-channel transistors are ideal for high-side switching applications, providing ease of use in configurations where sourcing current is required.

Configuration: SINGLE

A single configuration simplifies the design and reduces the footprint of the circuit, making it suitable for compact applications.

Surface Mount: YES

Surface mount technology allows for automated assembly, reducing manufacturing costs and enabling high-density circuit designs.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors ensure that the device is off at zero gate-to-source voltage, providing better power control and efficiency.

Maximum Drain Current (Abs) (ID): 3.5 A

A maximum drain current of 3.5 A allows for handling significant loads, making this transistor suitable for a variety of power applications.

Maximum Power Dissipation (Abs): 8.3 W

The ability to dissipate up to 8.3 W ensures reliability and longevity in high-power applications, reducing the risk of thermal damage.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOS technology provides excellent switching speeds and low power consumption, making this transistor very efficient for modern electronic designs.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature ensures stability and performance in demanding environments, making this transistor resilient to thermal stress.

Maximum Drain Current (ID): 3.5 A

The ability to sustain a maximum drain current of 3.5 A enhances the versatility of this product across different applications without needing derating.

Technical Specifications

Other Function Transistors PMFPB6545UP,115 attributes and parameters. Explore more Other Function Transistors devices from NXP Semiconductors

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

3.5 A

Maximum Drain Current (ID):

3.5 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Trade Compliance

PMFPB6545UP,115 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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