Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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NXP Semiconductors' PHP29N08T,127 is a N-CHANNEL FET with 75V DS breakdown voltage and 108A IDM. Ideal for switching applications, it has a max power dissipation of 88W and 0.05 ohm RDS(on). The transistor operates in enhancement mode with a max temp of 175°C.
Median Price
$1.130
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12
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Mouser Electronics
1+ parts
$0.800
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$0.688
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$0.613
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Rochester
$1.460
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DigiKey
$1.580
Verical
$1.512
$1.350
Arrow
$0.452
Chip1Stop
$0.451
Digiode
$0.582
Chip Stock
DigiKey Marketplace
$0.640
Vyrian
Anansix
Nova Conductors
Ampacity Inc.
$0.383
Corphita
$0.552
AZTECH Wire
$0.650
Corohmni
$1.672
Microchip USA
$9.945
Lixinc
Authorized Procurement Solutions
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A-Z Elektronik GmbH
Robosynatics
Lucentia Tech
$0.996
$0.975
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Supply Digital
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Argo Parts USA
Aranea Global
The use of plastic/epoxy as the package body material provides good thermal and electrical insulation properties, ensuring better reliability and safety.
The built-in diode simplifies circuit design and can protect against reverse voltage spikes, making this FET convenient and versatile for various applications.
Designed specifically for switching applications, this FET offers fast switching speeds and low on-resistance, optimizing performance in power control applications.
With a high maximum pulsed drain current, this FET can handle sudden spikes in current demands, making it suitable for applications that require high power handling capabilities.
The high maximum power dissipation allows for efficient heat dissipation, enabling the FET to operate at high power levels without overheating.
With a high maximum operating temperature, this FET can withstand elevated temperature environments, ensuring reliable performance in harsh conditions.
The low on-resistance of the FET results in minimal power loss and efficient power conversion, making it a suitable choice for high-performance applications.
Power Field Effect Transistors (FET) PHP29N08T,127 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from NXP Semiconductors
Case Connection:
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (Abs) (ID):
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
JEDEC-95 Code:
JESD-30 Code:
JESD-609 Code:
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Maximum Pulsed Drain Current (IDM):
Qualification:
Sub-Category:
Surface Mount:
Terminal Finish:
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Transistor Application:
Transistor Element Material:
PHP29N08T,127 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8541.29.00.75
SB
8541.29.00.80
NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.
Executive Director, President, CEO
Kurt Sievers
Executive VP, CFO
Bill Betz
Executive VP, Chief Sales Officer
Ron Martino
ICN8
Fabrication
Fab Initiation
1996
Netherlands
Nijmegen
Wafer Capacity
55,000
ATMC (Austin Tech & Mfg Center)
1995
USA
Austin
30,000
N/A
1989
Germany
Boeblingen
CHD
1993
Chandler
OHTC
1991
24,000
New Expansion Fab
2026
ECHO
2020
10,000
2N7002
National Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Package Style (Meter): SMALL OUTLINE; Terminal Position: DUAL;
LL4148
Rfe International
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
DS18B20U
Maxim Integrated
DS18B20U by Maxim Integrated is a 12-bit temperature sensor with 1-Wire interface. It operates b/w -55 to 125°C, offering ±0.5°C accuracy. Suitable for applications requiring digital output and surface mounting feature.
LM317T
Integrated Power Semiconductors
Other Regulators; No. of Terminals: 3; Operating Temperature (TJ-Min): 0 Cel; Terminal Pitch: 2.54 mm; Maximum Load Regulation (%): 1.5 %; Nominal Dropout Voltage-1: 3 V;
CC0603KRX7R9BB104
Yageo
Yageo's CC0603KRX7R9BB104 is a ceramic capacitor with 0.1uF capacitance and 50V rated DC voltage. With X7R temperature characteristics, it operates b/w -55 to 125°C. Ideal for surface mount applications in electronics due to its compact size of 1.6mm x 0.8mm x 0.8mm and wraparound terminals.
BAV99
Nexperia
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
0462-201-16141
TE Connectivity
TE Connectivity's 0462-201-16141 is a CRIMP terminal with MACHINED contact design. It operates b/w -55 to 125 °C, suitable for wire gauges from 20 to 16 AWG. With a rated current of 13A, it is ideal for applications requiring FEMALE ROUND PIN-SOCKET contacts.
LM317TG
Onsemi
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Terminal Form: THROUGH-HOLE; Minimum Input-Output Voltage Differential: 3 V; Qualification Status: Not Qualified; No. of Functions: 1;
1N4148
Eic Semiconductor
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
LM555CMX
Fairchild Semiconductor
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
1N4148WT
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
STM32F405RGT6
STMicroelectronics
STM32F405RGT6 by STMicroelectronics is a 32-bit microcontroller with 2/3.3V power supplies, 16 external interrupts, and 196608 RAM bytes. Ideal for industrial applications, it features CAN(2), I2C(3), SPI(3) connectivity options and operates at a max clock frequency of 26 MHz. With low power mode and DMA support, it offers versatile performance in compact dimensions.
1N4148WS
Dc Components
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
STM32H743ZIT6
STM32H743ZIT6 by STMicroelectronics is a 32-bit microcontroller with integrated cache and a max supply voltage of 3.6V. It is commonly used in industrial applications, offering features such as 21 timers, CAN and USB connectivity, and low power mode.
MURS160T3G
MURS160T3G by Onsemi is a single rectifier diode with a max output current of 2A and max repetitive peak reverse voltage of 600V. It has a fast recovery time of 0.075us, making it suitable for high voltage applications. The diode operates in temperatures ranging from -65 to 175°C, ideal for power systems requiring ultra-fast response.
OHN3140U
Optek Technology
MAGNETIC FIELD SENSOR,HALL EFFECT; Mounting Feature: THROUGH HOLE MOUNT; No. of Terminals: 3; Output Type: ANALOG CURRENT; Package Shape or Style: RECTANGULAR; Output Range: 25mA;
Unitrode
PIC18F4550-I/P
Microchip Technology
PIC18F4550-I/P by Microchip Technology is an 8-bit microcontroller with a max clock frequency of 48 MHz. It features 13-Ch 10-Bit ADC channels and USB connectivity, making it ideal for industrial applications requiring low power consumption and high-speed data processing. With 2048 RAM bytes and 256 Data EEPROM size, this CMOS technology-based microcontroller offers versatile performance in various embedded systems.
C0603C104K5RACAUTO
KEMET Corporation
KEMET C0603C104K5RACAUTO is a ceramic capacitor with 0.1uF capacitance, rated for 50V. It has X7R temperature characteristics, -55 to 125°C operating range, and ±10% tolerance. Ideal for automotive applications meeting AEC-Q200 standard, it comes in SMT package with matte tin finish and wraparound terminals.
0460-202-16141
TE Connectivity's 0460-202-16141 contact features a crimp terminal type, machined contact design, and rated AC voltage of 1500V. With a wire gauge range of 20-16 AWG, it is ideal for applications requiring a male round pin-socket contact style in assembly products.
NTD2955T4G
NTD2955T4G by Onsemi is a P-CHANNEL power FET with a min DS breakdown voltage of 60V. It is used for switching applications and has a max pulsed drain current of 18A.
IRF7103TRPBF-1
Infineon Technologies
Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 1;
PMV100EPAR
The Nexperia PMV100EPAR is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 9A IDM and 33mJ EAS, operating in ENHANCEMENT MODE at -55 to 175 °C. With a 0.13 ohm RDS(on), this transistor is suitable for various power management tasks in automotive and industrial sectors.
FDD6685
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 52 W; Qualification: Not Qualified; JESD-30 Code: R-PSSO-G2;
BSS138
North American Philips Discrete Products Div
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; No. of Elements: 1; Maximum Drain Current (Abs) (ID): .2 A;
FDS4675
FDS4675 by Onsemi is a P-CHANNEL Power FET with 40V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 50A and ID of 11A, with 0.013 ohm RDS(ON). The transistor operates in ENHANCEMENT MODE and can withstand temperatures from -55 to 175 °C.
NCV8406ASTT3G
NCV8406ASTT3G by Onsemi is an N-CHANNEL FET for SWITCHING applications. It features a 60V DS Breakdown Voltage, 0.24 ohm Drain-Source On Resistance, and 1.81W Power Dissipation. Ideal for use in automotive electronics due to AEC-Q101 standard compliance.
SUD50P04-09L-E3
Vishay Intertechnology
Vishay Intertechnology's SUD50P04-09L-E3 is a P-channel Power FET with 40V DS breakdown voltage and 100A IDM. Ideal for applications requiring high power dissipation, such as automotive systems or industrial equipment due to its 136W max power dissipation and -55 to 175°C operating temperature range.
FDBL86062-F085
FDBL86062-F085 by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 300A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, operates in ENHANCEMENT MODE, and has a max power dissipation of 429W.
FDS9926A
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Package Body Material: PLASTIC/EPOXY; Maximum Operating Temperature: 150 Cel;
DMN6068SE-13
Diodes Incorporated
DMN6068SE-13 by Diodes Inc. is a N-channel FET with 60V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode, 20.8A max pulsed drain current, and 0.068 ohm max drain-source resistance. Suitable for enhancement mode operation in small outline packages at up to 150°C operating temperature.
IRLML6344TRPBF
International Rectifier
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Terminal Form: GULL WING; JESD-30 Code: R-PDSO-G3;
SI7489DP-T1-E3
Vishay Intertechnology's SI7489DP-T1-E3 is a P-CHANNEL FET with 100V DS Breakdown Voltage, 40A IDM, and 83W Power Dissipation. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with -55 to 150 °C temperature range.
FDB2710
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 260 W; JESD-30 Code: R-XSSO-G2; Package Shape: RECTANGULAR;
IRF9530
Samsung
P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 88 W; Qualification: Not Qualified; Transistor Application: SWITCHING;
FDD86102LZ
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 54 W; JESD-30 Code: R-PSSO-G2; Maximum Drain Current (ID): 8 A;
IRF7759L2TRPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Package Shape: RECTANGULAR; No. of Elements: 1;
BSC011N03LSTATMA1
Infineon's BSC011N03LSTATMA1 is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 400A IDM, 0.0014 ohm RDS(on), and 190mJ EAS. Its small outline package and DUAL terminals make it suitable for high-power ENHANCEMENT MODE operations.
FDS4559
FDS4559 by Onsemi is a Power FET with N-Channel and P-Channel types, ideal for switching applications. It features a 60V min DS breakdown voltage, 20A max pulsed drain current, and 0.055 ohm max drain-source resistance. With a small outline package style and matte tin terminal finish, it operates in enhancement mode up to 175°C.
IPB010N06NATMA1
Infineon's IPB010N06NATMA1 is a N-CHANNEL FET with 60V DS breakdown voltage, ideal for switching applications. Features include 720A pulsed drain current, 1600mJ avalanche energy rating, and 0.001 ohm max on-resistance. With a max power dissipation of 300W and operating temp up to 175°C, it's suitable for high-power circuits in various industries.
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PHP29N08T,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Terminals: 3; Terminal Form: THROUGH-HOLE; Package Body Material: PLASTIC/EPOXY;
PHP21N06T,127
NXP Semiconductors
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 69 W; Avalanche Energy Rating (EAS): 30 mJ; Maximum Pulsed Drain Current (IDM): 84 A;
PHP20N06T
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 62 W; Terminal Finish: TIN; Maximum Drain-Source On Resistance: .075 ohm;
PHP210N03LT
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Operating Mode: ENHANCEMENT MODE; Case Connection: DRAIN; Maximum Pulsed Drain Current (IDM): 400 A;
PHP21N06T
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 69 W; Terminal Finish: TIN; Package Style (Meter): FLANGE MOUNT;
PHP20N06T,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 62 W; Maximum Drain-Source On Resistance: .075 ohm; Package Shape: RECTANGULAR;
PHP220N03MT
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Elements: 1; Package Body Material: PLASTIC/EPOXY; Package Shape: RECTANGULAR;
PHP23NQ10T
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 100 W; Maximum Drain Current (ID): 23 A; Maximum Pulsed Drain Current (IDM): 92 A;
PHP21N06LT
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 69 W; JESD-609 Code: e3; Qualification: Not Qualified;
PHP222
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.6 W; Transistor Element Material: SILICON; Maximum Drain Current (Abs) (ID): 3.2 A;
PHP210
P-CHANNEL; Surface Mount: YES; Qualification: Not Qualified; Maximum Drain Current (ID): 3.4 A; Package Body Material: PLASTIC/EPOXY; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
PHP222NQ04LT,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; JESD-609 Code: e3; Terminal Position: SINGLE;
PHP225NQ04T
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Maximum Operating Temperature: 175 Cel; Package Shape: RECTANGULAR;
PHP20NQ20T,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Package Body Material: PLASTIC/EPOXY; JESD-30 Code: R-PSFM-T3;
PHP225NQ04T,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Terminal Form: THROUGH-HOLE; Transistor Element Material: SILICON;
PHP20NQ20T
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Package Style (Meter): FLANGE MOUNT; Operating Mode: ENHANCEMENT MODE;
PHP23NQ11T,127
NXP Semiconductors' PHP23NQ11T,127 is a N-CHANNEL Power FET with 110V DS Breakdown Voltage. Ideal for SWITCHING applications, it features 92A Pulsed Drain Current and 0.07ohm On Resistance. The transistor operates in ENHANCEMENT MODE with a max power dissipation of 100W at 175°C.
PHP23NQ11T
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 100 W; Transistor Element Material: SILICON; Maximum Drain-Source On Resistance: .07 ohm;
PHP222NQ04LT
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Minimum DS Breakdown Voltage: 40 V; JESD-609 Code: e3;
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