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NX2301P

NXP Semiconductors

NX2301P by NXP Semiconductors

NX2301P by NXP Semiconductors is a P-CHANNEL FET with 20V DS Breakdown Voltage, 0.19 ohm RDS(on), and 150°C Max Operating Temp. Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE in a SMALL OUTLINE package.

Median Price

$0.156

Lifecycle Status

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16

In-Stock Inventory

1k+

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UK . 76,300 parts In-Stock

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Nova Conductors

Japan . 1,000 parts In-Stock

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Vyrian

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Digiode

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Poland . 3,000 parts In-Stock

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Partservice

France . 3,000 parts In-Stock

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Micros sp.j. W. Kędra i J. Lic

Poland . 3,000 parts In-Stock

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Bristol Electronics

USA . 2,760 parts In-Stock

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ComSIT Distribution GmbH

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Tectiva GmbH

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Anansix

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Cyclops Electronics Ltd

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J2 Sourcing AB

Sweden . 36 parts In-Stock

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Rebound Electronics

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Corohmni

South Africa . 960 parts In-Stock

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Continental Prestige Electronics

USA . 3,791 parts In-Stock

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Argo Parts USA

USA . 695 parts In-Stock

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Netroflash

USA . 100 parts In-Stock

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Ampacity Inc.

Singapore . 75,912 parts In-Stock

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Semicontronic

India . 75,909 parts In-Stock

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AZTECH Wire

Italy . 8,699 parts In-Stock

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Aztec Data Supply Inc.

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Advanced Electronics

New Zealand . 270 parts In-Stock

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Infinite Electronics LLP (Excess)

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Perfect Parts

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Overview

Upgrade your electronic devices with the NX2301P by NXP Semiconductors. This high-quality P-CHANNEL Small Signal Field Effect Transistor is the perfect solution for switching applications, offering reliability and efficiency. With a built-in diode and low on-resistance, this transistor provides seamless performance. Whether you're a hobbyist or a professional, this surface-mount transistor will elevate your projects to the next level. Trust in NXP Semiconductors' expertise in semiconductor technology to deliver exceptional products like the NX2301P.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides good insulation and protection for the internal components of the transistor.

Polarity or Channel Type: P-CHANNEL

P-channel transistors are known for their low on-resistance and high efficiency, making them suitable for various switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Built-in diode simplifies circuit designs and provides protection against reverse polarity.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in such scenarios.

Surface Mount: YES

Surface mount technology allows for easy and compact integration onto circuit boards.

Minimum DS Breakdown Voltage: 20 V

With a minimum breakdown voltage of 20V, this transistor can handle higher voltage applications.

Package Shape: RECTANGULAR

Rectangular shape provides easy mounting and soldering onto circuit boards.

Terminal Form: GULL WING

Gull wing terminal form provides reliable connections and ease of handling during assembly.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation allows for easy control of the transistor with low gate voltage.

No. of Terminals: 3

Having 3 terminals allows for versatile circuit design and configuration possibilities.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the circuit board and reduces overall size of the device.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOSFET technology offers high-speed switching capabilities and low power consumption.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can handle high temperature environments.

Transistor Element Material: SILICON

Silicon material ensures high reliability and stability of the transistor.

Terminal Finish: TIN

Tin terminal finish provides good electrical conductivity and resistance to corrosion.

Maximum Drain-Source On Resistance: 0.19 ohm

Low on-resistance (0.19 ohm) ensures minimal power loss and high efficiency in switching operations.

Terminal Position: DUAL

Dual terminal position allows for easy connection in various circuit layouts.

Technical Specifications

Small Signal Field Effect Transistors (FET) NX2301P attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Minimum DS Breakdown Voltage:

20 V

Maximum Drain-Source On Resistance:

.19 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NX2301P Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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