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IP4359CX4/LF-H500

NXP Semiconductors

IP4359CX4/LF-H500 by NXP Semiconductors

IP4359CX4/LF-H500 by NXP Semiconductors is a unidirectional transient voltage suppressor diode with a breakdown voltage of 7.5V. It features a compact square package and is ideal for protecting sensitive electronics from voltage spikes. This device ensures reliable performance in surface mount applications with its 2-element configuration.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,406 parts In-Stock

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Digiode

USA . 4,469 parts In-Stock

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4,469

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Anansix

USA . 119 parts In-Stock

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119

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One Stop Electronics

USA . 1,425 parts In-Stock

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$0.010

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$0.010

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AZTECH Wire

Italy . 12,144 parts In-Stock

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$5.780

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Metaverse IC Inc.

Canada . 186,927 parts In-Stock

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Kepictronics

USA . 46,630 parts In-Stock

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46,630

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Authorized Procurement Solutions

USA . 25,000 parts In-Stock

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25,000

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A-Z Elektronik GmbH

Germany . 11,143 parts In-Stock

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Perfect Parts

USA . 2,464 parts In-Stock

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Corphita

USA . 2,104 parts In-Stock

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Supply Digital

USA . 1,740 parts In-Stock

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1,740

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Alle Elektronik GmbH

Germany . 1,714 parts In-Stock

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UNI Independent Distributors

Spain . 1,465 parts In-Stock

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Overview

Elevate your designs with the IP4359CX4/LF-H500 from NXP Semiconductors, a trusted leader in innovative electronic solutions. This advanced transient suppression device ensures robust protection for your circuits against voltage spikes, enhancing reliability and performance. Ideal for consumer electronics, automotive applications, and industrial systems, it promises long-lasting durability and peace of mind, empowering you to create safer, more resilient products effortlessly.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This durable material offers reliable performance and protection against environmental factors, ensuring the longevity of the device.

Config: COMMON ANODE, 2 ELEMENTS

The common anode configuration allows for easy integration into circuits, making it user-friendly and versatile for various applications.

Surface Mount: YES

Surface mount technology provides a compact design, enabling efficient space utilization on PCBs and facilitating automated assembly.

Nominal Breakdown Voltage: 7.5 V

The nominal breakdown voltage provides reliable clamping during transient events, protecting sensitive components from voltage spikes.

Package Shape: SQUARE

The square package shape optimizes PCB layout and enhances thermal performance, suitable for various electronic designs.

No. of Terminals: 4

Having four terminals allows for versatile pin configurations, offering flexibility in circuit design and implementation.

Package Style (Meter): GRID ARRAY

The grid array package style promotes efficient signal routing and heat dissipation, improving overall performance.

Terminal Position: BOTTOM

Bottom terminal positioning improves solder joint reliability and thermal management during operation.

Minimum Breakdown Voltage: 6 V

The minimum breakdown voltage ensures protection against moderate voltage surges, safeguarding the electronic devices.

Maximum Breakdown Voltage: 9 V

With a maximum breakdown voltage, the device offers robust protection under high-stress conditions typical in transient events.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

This type of diode effectively suppresses voltage spikes, enhancing the reliability and safety of sensitive electronic circuits.

Technology: ZENER

Zener technology is known for its reliability and precision in voltage regulation, making it an excellent choice for transient suppression.

Terminal Form: BALL

Ball terminal form facilitates efficient soldering and improves electrical conductivity, ensuring consistent performance.

No. of Elements: 2

Two elements allow for improved protection against transients, providing enhanced clamping capability in electronic designs.

Polarity: UNIDIRECTIONAL

Unidirectional polarity is ideal for protecting circuits where current flows in only one direction, ensuring effective operation.

Diode Element Material: SILICON

Silicon provides excellent thermal stability and high-speed switching capabilities, ensuring optimal functionality even in demanding conditions.

Technical Specifications

Transient Suppression Devices IP4359CX4/LF-H500 attributes and parameters. Explore more Transient Suppression Devices devices from NXP Semiconductors

Specs

Maximum Breakdown Voltage:

9 V

Minimum Breakdown Voltage:

6 V

Nominal Breakdown Voltage:

7.5 V

Config:

COMMON ANODE, 2 ELEMENTS

Diode Element Material:

SILICON

JESD-30 Code:

S-PBGA-B4

No. of Elements:

2

No. of Terminals:

4

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

GRID ARRAY

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity:

UNIDIRECTIONAL

Qualification:

Not Qualified

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

ZENER

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

IP4359CX4/LF-H500 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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