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IP4359CX4/LF-H500,315

NXP Semiconductors

IP4359CX4/LF-H500,315 by NXP Semiconductors

IP4359CX4/LF-H500,315 by NXP Semiconductors is a Zener technology Trans Voltage Suppressor Diode with 2 elements. It has a breakdown voltage range of 6-9 V and features a common anode configuration. Ideal for transient suppression in electronic circuits due to its unidirectional polarity and silicon diode element material.

Median Price

$0.338

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 623,500 parts In-Stock

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-

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$0.299

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$0.248

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$0.221

623,500

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$0.299

$0.248

$0.221

Verical

USA . 616,500 parts In-Stock

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$0.377

10k+ parts

$0.310

616,500

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-

$0.377

$0.310

Distributors (In-Stock)

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Digiode

USA . 3,613 parts In-Stock

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$0.134

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$0.134

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Vyrian

USA . 5,722 parts In-Stock

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5,722

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Connector Distribution Corp

USA . 940 parts In-Stock

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940

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Right Parts Inc.

USA . 940 parts In-Stock

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940

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Anansix

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Distributors (Availability)

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Corphita

USA . 1,818 parts In-Stock

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$0.127

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$0.127

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AZTECH Wire

Italy . 7,949 parts In-Stock

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$0.170

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7,949

$0.170

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Continental Prestige Electronics

USA . 758,500 parts In-Stock

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$0.169

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758,500

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$0.169

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UNI Independent Distributors

Spain . 6,579 parts In-Stock

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Authorized Procurement Solutions

USA . 3,500 parts In-Stock

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3,500

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Supply Digital

USA . 560 parts In-Stock

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560

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Overview

Discover the cutting-edge IP4359CX4/LF-H500,315 by NXP Semiconductors, a top-tier Transient Suppression Device designed to protect your electronic devices effectively. With a superior build quality and advanced ZENER technology, this product offers unmatched reliability and performance. Ideal for a wide range of applications, this device ensures maximum protection against voltage spikes and surges. Trust NXP Semiconductors to deliver the best-in-class products, providing you with peace of mind and exceptional value. Upgrade your electronics with the IP4359CX4/LF-H500,315 and experience unparalleled protection and durability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and reliability, making this product suitable for various environmental conditions.

Config: COMMON ANODE, 2 ELEMENTS

The common anode configuration with 2 elements allows for efficient protection against transient voltage spikes, improving the overall performance of the device.

Surface Mount: YES

Surface mount capability enables easy installation on circuit boards, saving space and simplifying the assembly process.

Package Shape: SQUARE

The square package shape offers uniformity in design and allows for easy integration into circuit layouts.

No. of Terminals: 4

The 4 terminals provide stable connections and help in maintaining signal integrity, ensuring effective transient suppression.

No. of Elements: 2

Having 2 elements increases the device's capability to handle transient voltage spikes effectively, enhancing the protection level.

Minimum Breakdown Voltage: 6 V

The minimum breakdown voltage of 6 V ensures reliable protection against lower voltage transients, safeguarding the connected circuitry.

Maximum Breakdown Voltage: 9 V

The maximum breakdown voltage of 9 V offers a higher level of protection against transient voltage spikes, making this product suitable for a wider range of applications.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The use of trans voltage suppressor diodes ensures efficient suppression of transient voltage spikes, providing reliable protection for sensitive electronic components.

Technology: ZENER

Utilizing Zener technology allows for precise voltage regulation and reliable transient suppression, enhancing the performance and longevity of the device.

Terminal Form: BALL

The ball terminal form offers secure connections and improved heat dissipation, contributing to the overall reliability and longevity of the device.

Polarity: UNIDIRECTIONAL

With unidirectional polarity, the device efficiently suppresses positive voltage spikes, ensuring effective protection for circuit components connected in one direction.

Diode Element Material: SILICON

Silicon diode element material provides high efficiency in voltage regulation and transient suppression, making this product a reliable choice for various industrial applications.

Technical Specifications

Transient Suppression Devices IP4359CX4/LF-H500,315 attributes and parameters. Explore more Transient Suppression Devices devices from NXP Semiconductors

Specs

Maximum Breakdown Voltage:

9 V

Minimum Breakdown Voltage:

6 V

Config:

COMMON ANODE, 2 ELEMENTS

Diode Element Material:

SILICON

JESD-30 Code:

S-PBGA-B4

No. of Elements:

2

No. of Terminals:

4

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

GRID ARRAY

Polarity:

UNIDIRECTIONAL

Surface Mount:

YES

Technology:

ZENER

Terminal Form:

Terminal Position:

Trade Compliance

IP4359CX4/LF-H500,315 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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