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BZV55-C5V1,135

NXP Semiconductors

BZV55-C5V1,135 by NXP Semiconductors

NXP Semiconductors' BZV55-C5V1,135 Zener Diode has a 5.1 V nominal reference voltage with a max reverse current of 2 uA. It operates in temperatures ranging from -65 to 200 °C and has a max power dissipation of 0.4 W. This diode is commonly used for voltage regulation applications due to its low dynamic impedance and high voltage tolerance of 5%.

Median Price

$0.040

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Verical

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Lucentia Tech

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Overview

Unlock the power of precision with the NXP Semiconductors BZV55-C5V1,135 Zener Diode. Crafted with top-tier materials and cutting-edge technology, this diode offers unparalleled performance, making it the ideal choice for a wide range of applications. From voltage regulation to signal conditioning, this diode is designed to meet your needs with ease. Experience the quality and reliability of NXP Semiconductors, where innovation meets excellence. Elevate your projects with the BZV55-C5V1,135 and discover a world of possibilities.

Feature Benefit Bullets

Package Body Material: GLASS

The use of glass as the package body material provides better protection for the Zener diode, enhancing its durability and reliability.

Working Test Current: 5 mA

The Zener diode can handle a working test current of 5 mA, making it suitable for a variety of low-power electronic applications.

Maximum Reverse Current: 2 uA

With a low maximum reverse current of 2 uA, this Zener diode ensures efficient operation and minimal power loss in reverse bias conditions.

Maximum Voltage Tolerance: 5 %

The Zener diode has a tight maximum voltage tolerance of 5%, providing precise voltage regulation in electronic circuits.

Maximum Operating Temperature: 200 °C

The Zener diode can operate at temperatures up to 200°C, making it suitable for high-temperature environments.

Maximum Power Dissipation: 0.4 W

With a maximum power dissipation of 0.4 W, this Zener diode can handle moderate power levels without overheating.

Diode Type: ZENER DIODE

Being a Zener diode, this product is specifically designed for voltage regulation and stabilization applications.

Nominal Reference Voltage: 5.1 V

The Zener diode has a nominal reference voltage of 5.1 V, making it ideal for maintaining a stable output voltage in electronic circuits.

Technical Specifications

Zener Diodes BZV55-C5V1,135 attributes and parameters. Explore more Zener Diodes devices from NXP Semiconductors

Specs

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

60 ohm

JESD-30 Code:

O-LELF-R2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.4 W

Qualification:

Not Qualified

Nominal Reference Voltage:

5.1 V

Maximum Reverse Current:

2 uA

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

END

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Temperature Coefficient:

1.2 mV/Cel

Maximum Voltage Tolerance:

5 %

Working Test Current:

5 mA

Trade Compliance

BZV55-C5V1,135 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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