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BZA408B

NXP Semiconductors

BZA408B by NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 6; Surface Mount: YES; Package Shape: RECTANGULAR;

Median Price

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Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (In-Stock)

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Chip Stock

USA . 50,301 parts In-Stock

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Vyrian

USA . 4,858 parts In-Stock

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ComSIT Distribution GmbH

Germany . 4,320 parts In-Stock

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4,320

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LIBRA Elektronik GmbH

Germany . 3,000 parts In-Stock

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Martec Srl

Italy . 2,558 parts In-Stock

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Digiode

USA . 2,256 parts In-Stock

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Anansix

USA . 1,492 parts In-Stock

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LWI Electronics Inc

India . 1,145 parts In-Stock

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Cyclops Electronics Ltd

UK . 630 parts In-Stock

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630

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Prism Electronics

USA . 343 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 96 parts In-Stock

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Bristol Electronics

USA . 96 parts In-Stock

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Distributors (Availability)

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Native Components

USA . 1,921 parts In-Stock

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$0.149

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$0.143

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Northwest PG Solutions

USA . 1,668 parts In-Stock

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$0.164

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One Stop Electronics

USA . 1,299 parts In-Stock

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$2.010

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$2.010

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AZTECH Wire

Italy . 8,337 parts In-Stock

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$6.450

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$6.450

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Metaverse IC Inc.

Canada . 83,000 parts In-Stock

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Kepictronics

USA . 39,500 parts In-Stock

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Futuretech Components

Singapore . 24,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 7,615 parts In-Stock

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Authorized Procurement Solutions

USA . 7,000 parts In-Stock

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UNI Independent Distributors

Spain . 2,892 parts In-Stock

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GreenTree Electronics

Israel . 2,397 parts In-Stock

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Supply Digital

USA . 2,326 parts In-Stock

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USA . 2,111 parts In-Stock

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Corphita

USA . 1,346 parts In-Stock

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Assy Fe

Spain . 1,000 parts In-Stock

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Perfect Parts

USA . 384 parts In-Stock

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Technical Specifications

Transient Suppression Devices BZA408B attributes and parameters. Explore more Transient Suppression Devices devices from NXP Semiconductors

Specs

Additional Features:

LOW CAPACITANCE

Config:

COMPLEX

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

20 W

No. of Elements:

4

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

BIDIRECTIONAL

Maximum Power Dissipation:

.26 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

5 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

BZA408B Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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