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BUK9623-75A,118

NXP Semiconductors

BUK9623-75A,118 by NXP Semiconductors

NXP Semiconductors' BUK9623-75A,118 is a N-channel Power FET with 75V DS breakdown voltage and 213A IDM. Ideal for switching applications, it features a built-in diode, 0.026 ohm RDS(on), and 138W max power dissipation in a small outline package.

Median Price

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5

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1k+

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Digiode

USA . 3,901 parts In-Stock

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Vyrian

USA . 433 parts In-Stock

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Anansix

USA . 415 parts In-Stock

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France . 25 parts In-Stock

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Nova Conductors

Japan . 10 parts In-Stock

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Aztec Data Supply Inc.

USA . 696 parts In-Stock

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$0.750

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696

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Corohmni

South Africa . 680 parts In-Stock

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AZTECH Wire

Italy . 541 parts In-Stock

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$8.064

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One Stop Electronics

USA . 1,053 parts In-Stock

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$34.050

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Semicontronic

India . 645 parts In-Stock

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$47.050

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$45.874

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$45.638

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Ampacity Inc.

Singapore . 1,172 parts In-Stock

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UNI Independent Distributors

Spain . 5,834 parts In-Stock

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Corphita

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Argo Parts USA

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Continental Prestige Electronics

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Microchip USA

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Advanced Electronics

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Bastille Electronics

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Overview

Unlock the power of innovation with the BUK9623-75A,118 by NXP Semiconductors. This high-quality Power Field Effect Transistor offers exceptional performance in switching applications, providing customers with reliable and efficient solutions. With N-channel configuration and a built-in diode, this transistor maximizes functionality while minimizing complexity. Experience the value and benefits of NXP Semiconductors' expertise in semiconductor technology with the BUK9623-75A,118. Elevate your projects to new heights with this cutting-edge component.

Feature Benefit Bullets

Package Body Material PLASTIC/EPOXY

Plastic/epoxy material provides durability and resistance to external factors, making the product long-lasting and reliable.

Configuration SINGLE WITH BUILT-IN DIODE

Built-in diode simplifies the circuit design and saves space, making the product more efficient and cost-effective.

Transistor Application SWITCHING

Designed specifically for switching applications, ensuring high efficiency and fast response times in power control circuits.

Minimum DS Breakdown Voltage 75 V

With a high breakdown voltage, the product can handle higher voltages without failure, providing safety and reliability in high-power applications.

Maximum Pulsed Drain Current (IDM) 213 A

High pulsed drain current allows the product to handle sudden spikes in power without damage, making it suitable for various industrial applications.

Maximum Power Dissipation (Abs) 138 W

With a high power dissipation rating, the product can handle large amounts of power without overheating, ensuring stable performance under heavy loads.

Maximum Operating Temperature 175 °C

High operating temperature range allows the product to operate in harsh environments without performance degradation, making it suitable for industrial use.

Maximum Drain-Source On Resistance 0.026 ohm

Low on-resistance minimizes power loss and improves efficiency in power control applications, making the product energy-efficient.

Technical Specifications

Power Field Effect Transistors (FET) BUK9623-75A,118 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Avalanche Energy Rating (EAS):

120 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

75 V

Maximum Drain Current (Abs) (ID):

53 A

Maximum Drain Current (ID):

53 A

Maximum Drain-Source On Resistance:

.026 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

245

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

213 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BUK9623-75A,118 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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