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BGA7024

NXP Semiconductors

BGA7024 by NXP Semiconductors

WIDE BAND MEDIUM POWER; Gain: 13.5 dB; Maximum Input Power (CW): 25 dBm; Maximum Operating Frequency: 2700 MHz; Minimum Operating Temperature: -40 Cel; JESD-609 Code: e3;

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,074 parts In-Stock

1+ parts

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2,074

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Anansix

USA . 1,906 parts In-Stock

1+ parts

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1,906

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Digiode

USA . 1,750 parts In-Stock

1+ parts

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1,750

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Cogito LLC

Ukraine . 20 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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20

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Northwest PG Solutions

USA . 2,178 parts In-Stock

1+ parts

$2.396

100+ parts

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10k+ parts

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2,178

$2.396

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One Stop Electronics

USA . 1,295 parts In-Stock

1+ parts

$32.000

100+ parts

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1,295

$32.000

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A-Z Elektronik GmbH

Germany . 6,450 parts In-Stock

1+ parts

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6,450

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UNI Independent Distributors

Spain . 4,620 parts In-Stock

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4,620

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Alle Elektronik GmbH

Germany . 4,300 parts In-Stock

1+ parts

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4,300

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Corphita

USA . 2,488 parts In-Stock

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2,488

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Native Components

USA . 403 parts In-Stock

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$2.113

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403

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$2.113

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Perfect Parts

USA . 129 parts In-Stock

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129

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Technical Specifications

RF & Microwave Amplifiers BGA7024 attributes and parameters. Explore more RF & Microwave Amplifiers devices from NXP Semiconductors

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Gain:

13.5 dB

Maximum Input Power (CW):

25 dBm

JESD-609 Code:

e3

Maximum Operating Frequency:

2700 MHz

Minimum Operating Frequency:

400 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

RF or Microwave Device Type:

Terminal Finish:

TIN

Trade Compliance

BGA7024 RF & Microwave trade compliance attributes, and parameters.

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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