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BFR92A/A2,235

NXP Semiconductors

BFR92A/A2,235 by NXP Semiconductors

BFR92A/A2,235 by NXP Semiconductors is an NPN transistor designed for surface mount applications. It features a max power dissipation of 0.3W, a min DC current gain (hFE) of 65, and operates up to 150 °C. Ideal for RF amplification in compact devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 4,560 parts In-Stock

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4,560

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Digiode

USA . 4,273 parts In-Stock

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Anansix

USA . 2,178 parts In-Stock

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One Stop Electronics

USA . 164 parts In-Stock

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$26.050

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164

$26.050

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UNI Independent Distributors

Spain . 6,364 parts In-Stock

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Corphita

USA . 771 parts In-Stock

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771

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Native Components

USA . 313 parts In-Stock

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Northwest PG Solutions

USA . 217 parts In-Stock

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Overview

Elevate your designs with the BFR92A/A2,235 NPN transistor from NXP Semiconductors, a name synonymous with quality and innovation. This versatile surface-mount component excels in various applications, from RF amplification to signal processing, ensuring reliable performance under pressure. With exceptional power dissipation capabilities and high current gain, it empowers your projects while maintaining efficiency and longevity. Choose NXP for unmatched reliability and superior results!

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are widely used for their reliability and versatility in a variety of electronic circuits, making this product a great choice for diverse applications.

Configuration: SINGLE

The single configuration offers simplicity and ease of integration into your projects, ensuring straightforward design and implementation.

Surface Mount: YES

Surface mount design allows for compact circuit layouts, saving space in your projects and enabling easier automated assembly.

Maximum Power Dissipation (Abs): 0.3 W

A maximum power dissipation of 0.3 W ensures the transistor can handle moderate power applications, adding versatility in its usage.

Minimum DC Current Gain (hFE): 65

A current gain of 65 signifies efficient amplification, making this transistor suitable for use in signal processing and amplification stages.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor is reliable for use in high-temperature environments, ensuring durability and longevity.

Maximum Collector Current (IC): 0.025 A

The maximum collector current of 0.025 A makes this transistor appropriate for low-power applications, providing a good balance between performance and efficiency.

Technical Specifications

Other Function Transistors BFR92A/A2,235 attributes and parameters. Explore more Other Function Transistors devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

65

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Trade Compliance

BFR92A/A2,235 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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