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BFR92A/A2,215

NXP Semiconductors

BFR92A/A2,215 by NXP Semiconductors

BFR92A/A2,215 by NXP Semiconductors is an NPN single transistor ideal for RF applications. It features a max power dissipation of 0.3W, a min DC current gain (hFE) of 65, and operates up to 150 °C. Perfect for surface mount designs in communication devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 3,933 parts In-Stock

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3,933

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Anansix

USA . 2,643 parts In-Stock

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2,643

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Vyrian

USA . 94 parts In-Stock

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94

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One Stop Electronics

USA . 839 parts In-Stock

1+ parts

$40.050

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839

$40.050

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UNI Independent Distributors

Spain . 4,021 parts In-Stock

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4,021

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Northwest PG Solutions

USA . 2,310 parts In-Stock

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Corphita

USA . 1,665 parts In-Stock

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1,665

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Native Components

USA . 214 parts In-Stock

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Overview

Unlock the potential of your designs with the BFR92A/A2,215 NPN transistor from NXP Semiconductors. Renowned for their reliability and innovation, NXP delivers outstanding quality that empowers your applications in telecommunications, RF amplification, and beyond. With its superior performance and compact surface mount design, this transistor ensures efficient operation even in demanding environments, providing you with unmatched value and peace of mind in every project.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are versatile and commonly used, making this product suitable for a wide range of electronic applications.

Configuration: SINGLE

A single configuration simplifies design and integration into circuits, ensuring ease of use.

Surface Mount: YES

Surface mount capability allows for space-saving designs and automated assembly processes, enhancing manufacturing efficiency.

Maximum Power Dissipation (Abs): 0.3 W

With a maximum power dissipation of 0.3 W, this transistor can efficiently handle light loads in various applications.

Minimum DC Current Gain (hFE): 65

A minimum DC current gain of 65 indicates good amplification capability, making it effective for signal processing.

Maximum Operating Temperature: 150 °C

Operating at a maximum temperature of 150 °C ensures reliability and longevity under high-temperature conditions.

Maximum Collector Current (IC): 0.025 A

With a maximum collector current of 0.025 A, this transistor is well-suited for low-power applications, providing safety and efficiency.

Technical Specifications

Other Function Transistors BFR92A/A2,215 attributes and parameters. Explore more Other Function Transistors devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

65

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Trade Compliance

BFR92A/A2,215 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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