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BCX56-10,115

NXP Semiconductors

BCX56-10,115 by NXP Semiconductors

NXP Semiconductors' BCX56-10,115 is a NPN BJT transistor for switching applications. With hFE of 63, it supports max IC of 1A and VCE of 80V. Operating up to 150°C, it has fT of 180MHz making it suitable for small outline packages in automotive electronics.

Median Price

$0.148

Lifecycle Status

Suppliers In-Stock

24

In-Stock Inventory

1k+

Distributors (Authorized)

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Chip1Stop

Japan . 1,499 parts In-Stock

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$0.090

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Farnell

UK . 1,839 parts In-Stock

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$0.304

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$0.133

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$0.115

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Adafruit Industries

USA . 350 parts In-Stock

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$1.310

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$1.245

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$1.245

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$1.310

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$1.245

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Verical

USA . 1,469,980 parts In-Stock

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Arrow

USA . 56,000 parts In-Stock

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TTI

USA . 8,000 parts In-Stock

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Future Electronics

Canada . 3,000 parts In-Stock

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$0.169

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$0.161

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EBV Elektronik

Germany . 3,000 parts In-Stock

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RS (Exports)

UK . 2,750 parts In-Stock

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$0.126

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$0.109

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2,750

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Rochester

USA . 1,125 parts In-Stock

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$0.148

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$0.110

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Distributors (In-Stock)

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Digiode

USA . 3,558 parts In-Stock

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Nova Conductors

Japan . 50 parts In-Stock

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Chip Stock

USA . 15,645 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 6,810 parts In-Stock

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Vyrian

USA . 6,046 parts In-Stock

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EPE Components Inc.

USA . 3,479 parts In-Stock

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3,479

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IBS Electronics

USA . 3,000 parts In-Stock

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$0.456

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$0.226

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$0.226

NAC Semi

USA . 2,000 parts In-Stock

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$0.338

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$0.307

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$0.307

VNN

France . 1,169 parts In-Stock

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Anansix

USA . 691 parts In-Stock

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Bristol Electronics

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Dan-Mar Components

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Prism Electronics

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NexGen Digital

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Distributors (Availability)

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Semicontronic

India . 465,174 parts In-Stock

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$0.043

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$0.042

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465,174

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Ampacity Inc.

Singapore . 446,706 parts In-Stock

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Corphita

USA . 3,054 parts In-Stock

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Argo Parts USA

USA . 1,140 parts In-Stock

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Netroflash

USA . 1,000 parts In-Stock

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AZTECH Wire

Italy . 13,913 parts In-Stock

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Advanced Electronics

New Zealand . 350 parts In-Stock

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$1.310

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$1.245

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Aztec Data Supply Inc.

USA . 2,208 parts In-Stock

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Corohmni

South Africa . 125 parts In-Stock

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$1.889

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Continental Prestige Electronics

USA . 2,293,000 parts In-Stock

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Perfect Parts

USA . 668,916 parts In-Stock

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Eastek

USA . 159,000 parts In-Stock

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GreenTree Electronics

Israel . 101,000 parts In-Stock

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Futuretech Components

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QUARKTWIN TECHNOLOGY LTD

USA . 6,430 parts In-Stock

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UNI Independent Distributors

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Authorized Procurement Solutions

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Supply Digital

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Overview

Elevate your electronic designs with the BCX56-10,115 from NXP Semiconductors. As a leading manufacturer in the industry, NXP delivers top-quality Small Signal Bipolar Junction Transistors that are perfect for switching applications. With a maximum collector-emitter voltage of 80V and a peak reflow temperature of 260°C, this NPN transistor offers reliability and durability. Whether you're building circuits or designing new technology, the BCX56-10,115 provides the performance and value you need. Experience the benefits of NXP's high-performance transistors and take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is cost-effective and provides durability, making the transistor suitable for various environments.

Polarity or Channel Type: NPN

NPN transistors are commonly used for switching applications due to their high efficiency and fast response times.

Configuration: SINGLE

A single configuration simplifies circuit design and integration, making the transistor easy to use.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in high-speed operations.

Surface Mount: YES

The surface mount capability allows for easy and efficient PCB assembly, saving time and reducing overall costs.

Package Shape: RECTANGULAR

The rectangular shape helps with space-saving on the PCB and facilitates efficient heat dissipation.

Terminal Form: FLAT

Flat terminals ensure secure connections and enhance overall reliability of the transistor.

No. of Terminals: 3

With three terminals, the transistor can easily be integrated into various circuit designs.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB, making it ideal for compact electronic devices.

Minimum DC Current Gain (hFE): 63

The high minimum current gain ensures stable and consistent performance in switching applications.

Maximum Operating Temperature: 150 °C

With a high operating temperature, the transistor can withstand harsh conditions and operate reliably in a wide range of environments.

Maximum Collector-Emitter Voltage: 80 V

The high collector-emitter voltage rating allows for safe operation in higher voltage applications.

Transistor Element Material: SILICON

Silicon materials provide high performance and reliability, ensuring long-term functionality of the transistor.

Maximum Collector Current (IC): 1 A

A high collector current rating allows the transistor to handle high-power switching applications effectively.

Terminal Finish: TIN

Tin terminal finish provides excellent solderability and ensures consistent electrical contacts.

Terminal Position: SINGLE

Single terminal position simplifies installation and connections, enhancing overall usability of the transistor.

Case Connection: COLLECTOR

The case connection at the collector facilitates efficient heat dissipation, improving the transistor's overall thermal performance.

Maximum Time At Peak Reflow Temperature (s): 30

The short time at peak reflow temperature ensures the reliability of the transistor during the assembly process.

Peak Reflow Temperature °C: 260

With a high peak reflow temperature, the transistor can withstand the soldering process without damage.

Reference Standard: AEC-Q101; IEC-60134

The compliance with industry standards ensures the reliability and quality of the transistor.

Nominal Transition Frequency (fT): 180 MHz

With a high transition frequency, the transistor is suitable for high-frequency switching applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCX56-10,115 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

63

JEDEC-95 Code:

TO-243AA

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Reference Standard:

AEC-Q101; IEC-60134

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BCX56-10,115 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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