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BAT754C,215

NXP Semiconductors

BAT754C,215 by NXP Semiconductors

BAT754C,215 by NXP Semiconductors is a Schottky rectifier diode with max forward voltage of 0.42V and output current of 0.2A. It has common cathode config, dual terminals, and operates at max temp of 125°C. Ideal for applications requiring high-speed switching in compact electronic devices.

Median Price

$0.098

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Chip1Stop

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Rochester

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DigiKey

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Future Electronics

Canada . 252,000 parts In-Stock

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Arrow

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Verical

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Element14

Singapore . 40,666 parts In-Stock

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Farnell

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TTI

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EBV Elektronik

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Digiode

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Nova Conductors

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NAC Semi

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Chip Stock

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Component Sense

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Vyrian

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LIBRA Elektronik GmbH

Germany . 2,852 parts In-Stock

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Rebound Electronics

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ComSIT Distribution GmbH

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Anansix

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Cyclops Electronics Ltd

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Ampacity Inc.

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Corphita

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Advanced Electronics

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Aztec Data Supply Inc.

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Perfect Parts

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QUARKTWIN TECHNOLOGY LTD

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Glotronic Ltd.

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Overview

Discover the high-quality BAT754C,215 by NXP Semiconductors, a top-of-the-line diode rectifier designed for superior performance and reliability. With a common cathode configuration and Schottky technology, this product offers efficient power conversion with a maximum output current of 0.2A. Ideal for various applications, this small outline package is perfect for space-constrained designs. Trust in NXP Semiconductors' reputation for excellence and choose the BAT754C,215 for unparalleled value and benefits in your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diodes, making them suitable for various applications.

Surface Mount: YES

Enables easy and efficient PCB assembly, saving time and effort during production.

Maximum Operating Temperature: 125 °C

Allows the diodes to function effectively in a wide range of operating conditions.

Diode Type: RECTIFIER DIODE

Suitable for converting AC to DC current, making it ideal for rectification purposes in electronic circuits.

Technology: SCHOTTKY

Offers lower forward voltage drop and faster switching compared to standard diodes, enhancing efficiency and performance.

Maximum Repetitive Peak Reverse Voltage: 30 V

Provides protection against reverse voltage spikes, ensuring the reliability of the circuit.

Technical Specifications

Diodes & Rectifiers BAT754C,215 attributes and parameters. Explore more Diodes & Rectifiers devices from NXP Semiconductors

Specs

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.42 V

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

.6 A

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Maximum Output Current:

.2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

BAT754C,215 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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