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BAT754A,215

NXP Semiconductors

BAT754A,215 by NXP Semiconductors

BAT754A,215 by NXP Semiconductors is a Schottky rectifier diode with max forward voltage of 0.42V and output current of 0.2A. Commonly used in applications requiring small outline package style, it has a max repetitive peak reverse voltage of 30V making it suitable for various electronic circuits.

Median Price

$0.132

Lifecycle Status

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24

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1k+

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Future Electronics

Canada . 2,742 parts In-Stock

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$0.250

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$0.152

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$0.086

2,742

$0.250

$0.152

$0.121

$0.086

Mouser Electronics

USA . 1,190 parts In-Stock

1+ parts

$0.550

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$0.238

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$0.131

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$0.115

1,190

$0.550

$0.238

$0.131

$0.115

Rochester

USA . 669,220 parts In-Stock

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$0.137

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Verical

USA . 613,000 parts In-Stock

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Arrow

USA . 6,716 parts In-Stock

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Avnet

USA . 6,000 parts In-Stock

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Element14

Singapore . 4,243 parts In-Stock

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$0.145

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$0.102

Newark

USA . 3,000 parts In-Stock

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DigiKey

USA . 2,656 parts In-Stock

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Chip1Stop

Japan . 2,187 parts In-Stock

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RS (Exports)

UK . 1,225 parts In-Stock

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Digiode

USA . 3,753 parts In-Stock

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$0.049

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Nova Conductors

Japan . 50 parts In-Stock

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$0.112

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TME

Poland . 259 parts In-Stock

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$0.260

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$0.141

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Chip Stock

USA . 77,000 parts In-Stock

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NAC Semi

USA . 12,000 parts In-Stock

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$0.068

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Vyrian

USA . 4,371 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 4,371 parts In-Stock

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IBS Electronics

USA . 3,000 parts In-Stock

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$0.051

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$0.051

Rebound Electronics

UK . 2,765 parts In-Stock

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Anansix

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Cyclops Electronics Ltd

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ComSIT Distribution GmbH

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VNN

France . 75 parts In-Stock

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Ampacity Inc.

Singapore . 166,582 parts In-Stock

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$0.037

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Semicontronic

India . 164,788 parts In-Stock

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Aztec Data Supply Inc.

USA . 2,232 parts In-Stock

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Corphita

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Corohmni

South Africa . 854 parts In-Stock

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Argo Parts USA

USA . 2,011 parts In-Stock

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Netroflash

USA . 1,000 parts In-Stock

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AZTECH Wire

Italy . 10,626 parts In-Stock

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GreenTree Electronics

Israel . 1,401,000 parts In-Stock

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Eastek

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Perfect Parts

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RC Electronics

USA . 70,000 parts In-Stock

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Authorized Procurement Solutions

USA . 20,000 parts In-Stock

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Lixinc

USA . 17,214 parts In-Stock

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Glotronic Ltd.

UK . 14,400 parts In-Stock

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Continental Prestige Electronics

USA . 5,790 parts In-Stock

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$0.167

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$0.086

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UNI Independent Distributors

Spain . 3,770 parts In-Stock

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Supply Digital

USA . 1,484 parts In-Stock

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Overview

Discover the BAT754A,215 by NXP Semiconductors, a high-quality Schottky rectifier diode with common anode configuration. Perfect for various applications, this small-outline package offers a maximum forward voltage of 0.42V and a maximum output current of 0.2A. With NXP's reputation for excellence in semiconductor manufacturing, you can trust that this diode will deliver reliable performance. Upgrade your electronic projects with the BAT754A,215 and experience the value and benefits it brings to your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides good insulation and protection for the diodes, ensuring reliability and longevity.

Config: COMMON ANODE, 2 ELEMENTS

Common anode configuration with 2 elements allows for efficient current control and voltage regulation.

Surface Mount: YES

Surface mount capability makes installation and soldering easier, especially in compact electronic circuits.

Package Shape: RECTANGULAR

Rectangular shape allows for easy placement on PCBs and efficient use of space.

Maximum Operating Temperature: 125 °C

High maximum operating temperature ensures reliable performance even under demanding conditions.

Diode Type: RECTIFIER DIODE

Rectifier diode type is ideal for converting alternating current (AC) to direct current (DC) efficiently.

Maximum Forward Voltage (VF): 0.42 V

Low maximum forward voltage drop results in minimal power loss and efficient energy conversion.

Technology: SCHOTTKY

Schottky technology provides fast switching speeds and low forward voltage drop, making the diode highly efficient.

Maximum Repetitive Peak Reverse Voltage: 30 V

High maximum repetitive peak reverse voltage ensures reliable operation and protection against reverse voltage spikes.

Technical Specifications

Diodes & Rectifiers BAT754A,215 attributes and parameters. Explore more Diodes & Rectifiers devices from NXP Semiconductors

Specs

Config:

COMMON ANODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.42 V

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

.6 A

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Maximum Output Current:

.2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

BAT754A,215 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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