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272216207802

NXP Semiconductors

272216207802 by NXP Semiconductors

The NXP 272216207802 is a high-performance RF/Microwave circulator designed for efficient signal routing. It supports max input power of 46.53 dBm, operates b/w 1805-1880 MHz, and maintains low insertion loss of just 0.35 dB. Ideal for telecom applications, it ensures reliable performance in demanding environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,397 parts In-Stock

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1,397

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Vyrian

USA . 418 parts In-Stock

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418

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Anansix

USA . 165 parts In-Stock

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165

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 3,621 parts In-Stock

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3,621

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Overview

Experience unmatched reliability and performance with the 272216207802 by NXP Semiconductors. This high-quality RF/Microwave circulator module is designed to enhance signal integrity in demanding applications, ensuring seamless communication in telecom, aerospace, and industrial sectors. With superior efficiency and robust construction, it minimizes loss while maximizing power handling, delivering exceptional value and peace of mind for your critical projects. Choose NXP for cutting-edge solutions that elevate your technology to new heights.

Feature Benefit Bullets

Maximum Input Power (CW): 46.53 dBm

This high input power rating ensures the device can handle significant power levels without distortion, making it suitable for robust RF applications.

Maximum Voltage Standing Wave Ratio: 1.15

With a low VSWR, this circulator minimizes reflected power, enhancing performance and improving efficiency in RF systems.

Construction: MODULE

The modular construction allows for easier integration into existing systems, providing flexibility in deployment.

Maximum Operating Temperature: 60 °C

This high temperature tolerance ensures reliable operation in challenging environments, making it ideal for demanding applications.

Minimum Operating Temperature: -10 °C

With a wide temperature range, this device can perform efficiently in various environmental conditions.

Maximum Insertion Loss: 0.35 dB

Low insertion loss means better signal integrity and lower energy loss, crucial for maintaining signal quality in RF communications.

RF or Microwave Device Type: 3 PORT CIRCULATOR

Being a 3-port circulator allows the device to manage directionality in RF signals effectively, enhancing system functionality.

Minimum Operating Frequency: 1805 MHz

This device supports a minimum frequency of 1805 MHz, making it suitable for a variety of modern communication applications.

Maximum Operating Frequency: 1880 MHz

Capable of operating up to 1880 MHz, this product is effective for specific RF applications, ensuring compatibility with various standards.

Technical Specifications

RF/Microwave Isolator/Circulators 272216207802 attributes and parameters. Explore more RF/Microwave Isolator/Circulators devices from NXP Semiconductors

Specs

Construction:

MODULE

Maximum Input Power (CW):

46.53 dBm

Maximum Insertion Loss:

.35 dB

Maximum Operating Frequency:

1880 MHz

Minimum Operating Frequency:

1805 MHz

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

-10 Cel

RF or Microwave Device Type:

Maximum Voltage Standing Wave Ratio:

1.15

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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