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272216208871

NXP Semiconductors

272216208871 by NXP Semiconductors

ISOLATOR; Maximum Voltage Standing Wave Ratio: 1.25; Maximum Input Power (CW): 50 dBm; Minimum Operating Temperature: -10 Cel; Minimum Operating Frequency: 424 MHz; Construction: MODULE;

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,838 parts In-Stock

1+ parts

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1k+ parts

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4,838

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Digiode

USA . 2,812 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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2,812

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Anansix

USA . 534 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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534

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 2,783 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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2,783

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Technical Specifications

RF/Microwave Isolator/Circulators 272216208871 attributes and parameters. Explore more RF/Microwave Isolator/Circulators devices from NXP Semiconductors

Specs

Construction:

MODULE

Maximum Input Power (CW):

50 dBm

Maximum Insertion Loss:

.7 dB

Maximum Operating Frequency:

431 MHz

Minimum Operating Frequency:

424 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-10 Cel

RF or Microwave Device Type:

Maximum Voltage Standing Wave Ratio:

1.25

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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