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272216207861

NXP Semiconductors

272216207861 by NXP Semiconductors

272216207861 by NXP Semiconductors is a high-performance RF/Microwave circulator designed for efficient signal routing. It supports max input power of 46.53 dBm, operates b/w 1930-1990 MHz, and features low insertion loss of just 0.35 dB. Ideal for telecommunications applications, it ensures reliable performance in varying temperatures from -10 °C to 60 °C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,946 parts In-Stock

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4,946

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Digiode

USA . 1,719 parts In-Stock

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1,719

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Anansix

USA . 172 parts In-Stock

1+ parts

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172

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 3,911 parts In-Stock

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3,911

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Overview

Unlock superior performance with the NXP Semiconductors 272216207861 RF/Microwave Circulator, designed for seamless operation in demanding environments. With its exceptional power handling and low insertion loss, this module ensures reliable signal integrity for your critical applications. NXP's commitment to quality and innovation means you can trust this circulator to enhance system efficiency, making it an invaluable asset in telecommunications and networking solutions. Experience unparalleled reliability and precision today!

Feature Benefit Bullets

Maximum Input Power (CW): 46.53 dBm

This high input power capability allows the isolator/circulator to handle robust signal levels, making it suitable for demanding RF applications without risk of damage.

Maximum Voltage Standing Wave Ratio: 1.15

A low VSWR indicates minimal reflection and optimal power transfer, ensuring efficient operation and improved system performance.

Construction: MODULE

The module construction offers compactness and ease of integration into various RF systems, facilitating flexibility in design.

Maximum Operating Temperature: 60 °C

With a maximum operating temperature of 60 °C, this product can function reliably in elevated thermal environments, enhancing its durability and lifespan.

Minimum Operating Temperature: -10 °C

Operating in temperatures as low as -10 °C ensures reliable performance in diverse environmental conditions, expanding its application range.

Maximum Insertion Loss: 0.35 dB

A low insertion loss value ensures minimal signal degradation, enhancing overall system efficiency and performance in RF transmission.

RF or Microwave Device Type: 3 PORT CIRCULATOR

The 3-port design allows for versatile signal routing, making it ideal for various RF applications, including communication and radar systems.

Minimum Operating Frequency: 1930 MHz

Beginning at 1930 MHz means this device is well-suited for modern communication standards, accommodating a wide range of RF services.

Maximum Operating Frequency: 1990 MHz

The upper frequency limit of 1990 MHz ensures compatibility with high-frequency applications, making it a suitable choice for advanced RF systems.

Technical Specifications

RF/Microwave Isolator/Circulators 272216207861 attributes and parameters. Explore more RF/Microwave Isolator/Circulators devices from NXP Semiconductors

Specs

Construction:

MODULE

Maximum Input Power (CW):

46.53 dBm

Maximum Insertion Loss:

.35 dB

Maximum Operating Frequency:

1990 MHz

Minimum Operating Frequency:

1930 MHz

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

-10 Cel

RF or Microwave Device Type:

Maximum Voltage Standing Wave Ratio:

1.15

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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