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272216208911

NXP Semiconductors

272216208911 by NXP Semiconductors

The NXP 272216208911 is an RF isolator module designed for high-performance applications. It supports a max input power of 46.02 dBm, operates b/w 1805-1880 MHz, and maintains a low insertion loss of just 0.35 dB. Ideal for telecom systems, it withstands temps from -10 °C to 85 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,755 parts In-Stock

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2,755

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Anansix

USA . 2,036 parts In-Stock

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2,036

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Vyrian

USA . 1,199 parts In-Stock

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1,199

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,703 parts In-Stock

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1,703

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Overview

Discover the reliability and performance of the 272216208911 by NXP Semiconductors, a premier RF isolator designed for exceptional signal integrity in demanding environments. With superior build quality and a robust operating range, this module enhances communication systems while minimizing signal loss. Experience peace of mind knowing you’re backed by NXP’s leading expertise, ensuring your applications thrive with efficiency and resilience, even under extreme conditions.

Feature Benefit Bullets

Maximum Input Power (CW): 46.02 dBm

This high maximum input power capability ensures that the isolator can handle strong signals without distorting or damaging the device, making it suitable for demanding RF applications.

Maximum Voltage Standing Wave Ratio: 1.2

A low VSWR of 1.2 indicates excellent impedance matching, which minimizes signal reflection and maximizes power transfer, thus enhancing system performance.

Construction: MODULE

The module construction provides a compact and integrated design that simplifies installation and improves reliability in various applications.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85 °C, this isolator can perform in high-temperature environments, ensuring reliability under diverse operating conditions.

Minimum Operating Temperature: -10 °C

The ability to operate down to -10 °C expands usability in colder climates and applications, providing flexibility in deployment.

Maximum Insertion Loss: 0.35 dB

A maximum insertion loss of just 0.35 dB means minimal signal degradation when passing through the isolator, which helps maintain overall system performance.

RF or Microwave Device Type: ISOLATOR

As an isolator, this device effectively prevents reflected signals from interfering with the source, enhancing the stability and efficiency of the RF system.

Minimum Operating Frequency: 1805 MHz

The ability to operate at a minimum frequency of 1805 MHz allows it to be utilized in a wide range of wireless applications, including those in modern communication systems.

Maximum Operating Frequency: 1880 MHz

Operating up to 1880 MHz makes this isolator suitable for specific frequency bands used in mobile communications, ensuring compatibility with advanced technologies.

Technical Specifications

RF/Microwave Isolator/Circulators 272216208911 attributes and parameters. Explore more RF/Microwave Isolator/Circulators devices from NXP Semiconductors

Specs

Construction:

MODULE

Maximum Input Power (CW):

46.02 dBm

Maximum Insertion Loss:

.35 dB

Maximum Operating Frequency:

1880 MHz

Minimum Operating Frequency:

1805 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-10 Cel

RF or Microwave Device Type:

Maximum Voltage Standing Wave Ratio:

1.2

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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