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NTE2932

Nte Electronics

NTE2932 by Nte Electronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 90 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Qualification: Not Qualified;

Median Price

$7.930

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 488 parts In-Stock

1+ parts

$7.930

100+ parts

$6.580

1k+ parts

$6.580

10k+ parts

$6.580

488

$7.930

$6.580

$6.580

$6.580

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey Marketplace

USA . 488 parts In-Stock

1+ parts

$7.930

100+ parts

$6.580

1k+ parts

-

10k+ parts

-

488

$7.930

$6.580

-

-

American Microsemiconductor Inc.

USA . 306 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

306

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Microchip USA

USA . 113 parts In-Stock

1+ parts

$22.204

100+ parts

-

1k+ parts

-

10k+ parts

-

113

$22.204

-

-

-

Technical Specifications

Power Field Effect Transistors (FET) NTE2932 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Nte Electronics

Specs

Avalanche Energy Rating (EAS):

605 mJ

Minimum DS Breakdown Voltage:

200 V

Maximum Drain Current (Abs) (ID):

21.3 A

Maximum Drain Current (ID):

21.3 A

Maximum Drain-Source On Resistance:

.085 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

130 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTE2932 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Nte Electronics

Founded in New Jersey in 1979, NTE Electronics, Inc has grown from a small-town supplier with ten semiconductors in its entire line to the largest aftermarket semiconductor supplier in the industry. Today, our product line consists of over 23,000 devices. Included in this offering is NTE Brand Semiconductors. In January 2001 NTE acquired the assets of the ECG division of Philips N.A. With this addition, NTE became the industry leader in supplying private label aftermarket electronic components to the Industrial, Commercial, Consumer, and MRO marketplace. NTE is a Master Distributor for some of the industry's major manufacturers of electronic components and accessories. NTE's 40,000 square foot headquarters in Bloomfield, NJ houses, under one roof, all the essential services and inventory to continually supply electronic components to its worldwide network of authorized distributors. NTE's warehouse maintains a large inventory of each device to ensure a 98% fill rate and an average 24-hour shipping time. NTE devices are quality tested to consistently assure that they meet or exceed the industry specifications of the device they are replacing. They have been used in NASA space projects, German automobiles, hospital/medical applications and in virtually every type of consumer item. NTE's global network of distributors extends across the United States, Canada, Latin America, the Caribbean and 35 other countries throughout the world. No matter how you measure success, NTE Electronics, Inc has become the leader in the replacement electronic component industry.

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