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PTVS10VU1UPAZ

Nexperia

PTVS10VU1UPAZ by Nexperia

PTVS10VU1UPAZ by Nexperia is a single transient suppression device with 3000W power dissipation. It operates b/w -55 to 150°C, has a breakdown voltage of 11.1-12.3V, and meets AEC-Q101, IEC-60134, IEC-61000-4-2 standards. Ideal for protecting sensitive electronics from voltage spikes in automotive and industrial applications.

Median Price

$0.251

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

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Mouser Electronics

USA . 66 parts In-Stock

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$1.000

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$0.436

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$0.199

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$0.177

66

$1.000

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$0.177

Rochester

USA . 2,183 parts In-Stock

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-

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$0.251

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$0.208

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$0.185

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Verical

USA . 2,183 parts In-Stock

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$0.232

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Chip Stock

USA . 61,000 parts In-Stock

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Vyrian

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Nova Conductors

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 1,849 parts In-Stock

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$0.070

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$0.070

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Ampacity Inc.

Singapore . 1,287 parts In-Stock

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$0.081

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Semicontronic

India . 1,196 parts In-Stock

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$0.081

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$0.079

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$0.079

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Corohmni

South Africa . 287 parts In-Stock

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$0.089

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AZTECH Wire

Italy . 6,131 parts In-Stock

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iodParts Technologies Inc.

India . 76,765 parts In-Stock

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Authorized Procurement Solutions

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Lixinc

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Argo Parts USA

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Kepictronics

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Perfect Parts

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Supply Digital

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Continental Prestige Electronics

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Bastille Electronics

Australia . 40 parts In-Stock

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Overview

Enhance the reliability of your electronic devices with Nexperia's PTVS10VU1UPAZ Transient Suppression Device. Built with top-quality materials and cutting-edge technology, this single-configured device offers superior protection against voltage spikes. Ideal for a wide range of applications, from automotive to industrial electronics, this diode ensures maximum performance even in extreme conditions. Trust Nexperia for exceptional quality and peace of mind, get your PTVS10VU1UPAZ today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection, making the device suitable for various environmental conditions.

Maximum Non Repetitive Peak Reverse Power Dissipation: 3000 W

With a high power dissipation capacity, this device can effectively handle surges and transient voltage spikes, ensuring protection for connected equipment.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows the device to function reliably even in elevated temperature environments.

Minimum Breakdown Voltage: 11.1 V

The low minimum breakdown voltage indicates the threshold at which the device starts conducting and suppressing transient voltages effectively.

Reference Standard: AEC-Q101; IEC-60134; IEC-61000-4-2, 4-5

Compliance with industry standards ensures that the device meets quality and performance requirements for transient suppression in various applications.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The Trans Voltage Suppressor diode type is specifically designed for transient voltage suppression, providing efficient protection for connected circuits.

Technical Specifications

Transient Suppression Devices PTVS10VU1UPAZ attributes and parameters. Explore more Transient Suppression Devices devices from Nexperia

Specs

Additional Features:

IEC-61643-321

Maximum Breakdown Voltage:

12.3 V

Minimum Breakdown Voltage:

11.1 V

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-N3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

3000 W

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Reference Standard:

AEC-Q101; IEC-60134; IEC-61000-4-2, 4-5

Maximum Repetitive Peak Reverse Voltage:

10 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

PTVS10VU1UPAZ Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Nexperia

Founded in 2017, Nexperia is a leading provider of semiconductors, based out of Nijmegen, the Netherlands. It is owned by the partially state-owned Chinese company Wingtech Technology. With factories in Hamburg, Germany and Greater Manchester, England, Nexperia is able to provide its clients with high quality semiconductor products quickly and efficiently.On November 8, 2023, Vishay and Nexperia BV announced that they have entered into an agreement whereby Vishay will acquire Nexperia’s wafer fabrication facility and operations located in Newport, South Wales, U.K. for approximately $177,000 in cash, subject to customary post-closing adjustments. On November 8, 2023, Vishay remitted $8,750 to an escrow account as a deposit for the acquisition. Such amount is included within "Purchase of and deposits for businesses, net of cash acquired" on the consolidated statement of cash flows. To effect the transaction, Vishay will acquire a 100% interest in the legal entity Neptune 6 Limited, and its wholly-owned operating subsidiary, Nexperia Newport Limited, which owns and operates the Newport facility. The closing of the transaction is subject to U.K. government review and customary closing conditions, and is expected to occur in the first quarter of 2024.

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Management team

CEO

Xuezheng Zhang (Wing)

CFO

Stefan Tilger

COO

Achim Kempe

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Hamburg

Fabrication

Fab Initiation

1981

Germany

Hamburg

Wafer Capacity

36,000

1981

36,000

Manchester (8-inch line)

Fabrication

Fab Initiation

2017

Australia

Hazelgrove

Wafer Capacity

12,000

2017

12,000

Manchester (6-inch line)

Fabrication

Fab Initiation

1998

Australia

Hazelgrove

Wafer Capacity

22,000

1998

22,000

Shanghai Fab

Fabrication

Fab Initiation

2022

China

Shanghai

Wafer Capacity

2022

Nexperia Newport

Fabrication

Fab Initiation

1998

UK

Newport

Wafer Capacity

34,000

1998

34,000

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