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PTVS36VS1UR,115

NXP Semiconductors

PTVS36VS1UR,115 by NXP Semiconductors

NXP Semiconductors' PTVS36VS1UR,115 is a single avalanche diode with 400W peak power dissipation and 42.1V breakdown voltage. Ideal for transient suppression in automotive electronics, it operates b/w -55°C to 150°C, with a max clamping voltage of 58.1V.

Median Price

$0.136

Lifecycle Status

Suppliers In-Stock

22

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 9,376 parts In-Stock

1+ parts

$0.580

100+ parts

$0.227

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$0.171

10k+ parts

$0.100

9,376

$0.580

$0.227

$0.171

$0.100

DigiKey

USA . 6,564 parts In-Stock

1+ parts

$0.580

100+ parts

$0.226

1k+ parts

$0.152

10k+ parts

-

6,564

$0.580

$0.226

$0.152

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Element14

Singapore . 5,464 parts In-Stock

1+ parts

$0.581

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$0.268

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$0.168

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5,464

$0.581

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Newark

USA . 1,675 parts In-Stock

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$1.020

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$0.396

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$0.266

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$1.020

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$0.266

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Rochester

USA . 54,980 parts In-Stock

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$0.102

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$0.085

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$0.075

54,980

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$0.102

$0.085

$0.075

Future Electronics

Canada . 15,000 parts In-Stock

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$0.370

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$0.370

Arrow

USA . 15,000 parts In-Stock

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$0.112

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Verical

USA . 15,000 parts In-Stock

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$0.113

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RS (Exports)

UK . 12,330 parts In-Stock

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$0.127

12,330

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$0.127

Chip1Stop

Japan . 9,000 parts In-Stock

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$0.075

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Farnell

UK . 8,769 parts In-Stock

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$0.144

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$0.080

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$0.068

8,769

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$0.080

$0.068

TTI

USA . 6,000 parts In-Stock

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$0.085

6,000

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Distributors (In-Stock)

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Nova Conductors

Japan . 1,000 parts In-Stock

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$0.117

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$0.117

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Digiode

USA . 4,888 parts In-Stock

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$0.370

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$0.370

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TME

Poland . 4,965 parts In-Stock

1+ parts

$0.460

100+ parts

$0.208

1k+ parts

$0.141

10k+ parts

$0.115

4,965

$0.460

$0.208

$0.141

$0.115

Chip Stock

USA . 67,000 parts In-Stock

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IBS Electronics

USA . 36,000 parts In-Stock

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$0.519

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$0.519

NAC Semi

USA . 27,000 parts In-Stock

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$1.110

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$1.110

Vyrian

USA . 7,587 parts In-Stock

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Anansix

USA . 1,710 parts In-Stock

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Bristol Electronics

USA . 730 parts In-Stock

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730

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Atlantic Semiconductor

USA . 730 parts In-Stock

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730

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Distributors (Availability)

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Modulus Dynamics

Lithuania . 25,050 parts In-Stock

1+ parts

$0.067

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$0.067

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$0.067

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$0.067

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AZTECH Wire

Italy . 10,902 parts In-Stock

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Argo Parts USA

USA . 4,405 parts In-Stock

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$0.117

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Netroflash

USA . 500 parts In-Stock

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$0.117

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Ampacity Inc.

Singapore . 9,465 parts In-Stock

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Corohmni

South Africa . 90 parts In-Stock

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$0.163

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Corphita

USA . 4,790 parts In-Stock

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$0.351

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Kepictronics

USA . 18,560 parts In-Stock

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Perfect Parts

USA . 13,754 parts In-Stock

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Glotronic Ltd.

UK . 12,000 parts In-Stock

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Eastek

USA . 9,000 parts In-Stock

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Continental Prestige Electronics

USA . 8,150 parts In-Stock

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$0.177

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$0.105

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$0.081

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$0.081

UNI Independent Distributors

Spain . 7,292 parts In-Stock

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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Supply Digital

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Futuretech Components

Singapore . 950 parts In-Stock

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Overview

Power up your electronic devices with the PTVS36VS1UR,115 by NXP Semiconductors. As a leader in semiconductor technology, NXP ensures top-notch quality and reliability in their Transient Suppression Devices. This single-configured diode boasts a maximum clamping voltage of 58.1V, providing superior protection against voltage spikes. Ideal for a wide range of applications, this product offers peace of mind and unmatched performance to customers seeking the best in transient suppression technology. Choose NXP Semiconductors for cutting-edge solutions that deliver value and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Ensures durability and resistance to environmental factors, making it suitable for various applications.

Maximum Non Repetitive Peak Reverse Power Dissipation: 400 W

Provides high power dissipation capability for protecting sensitive electronic components from voltage spikes.

Nominal Breakdown Voltage: 42.1 V

Offers precision protection at a specific voltage threshold, ensuring efficient suppression of transient voltage spikes.

Maximum Operating Temperature: 150 °C

Allows the device to function effectively in a wide range of temperature conditions, increasing its versatility.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Utilizes trans voltage suppressor diode technology to quickly shunt excess voltage away from sensitive components, safeguarding against damage.

Technical Specifications

Transient Suppression Devices PTVS36VS1UR,115 attributes and parameters. Explore more Transient Suppression Devices devices from NXP Semiconductors

Specs

Maximum Breakdown Voltage:

44.2 V

Minimum Breakdown Voltage:

40 V

Nominal Breakdown Voltage:

42.1 V

Maximum Clamping Voltage:

58.1 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

400 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Qualification:

Not Qualified

Reference Standard:

AEC-Q101; IEC-60134; IEC-61000-4-2; IEC-61643-321

Maximum Repetitive Peak Reverse Voltage:

36 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

PTVS36VS1UR,115 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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