Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Reference Standard: AEC-Q101; IEC-60134; JESD-609 Code: e3; Transistor Application: SWITCHING;
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Small Signal Field Effect Transistors (FET) PMV65XPEA attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Nexperia
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
JEDEC-95 Code:
JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Operating Mode:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Reference Standard:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Maximum Time At Peak Reflow Temperature (s):
Transistor Application:
Transistor Element Material:
PMV65XPEA Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Founded in 2017, Nexperia is a leading provider of semiconductors, based out of Nijmegen, the Netherlands. It is owned by the partially state-owned Chinese company Wingtech Technology. With factories in Hamburg, Germany and Greater Manchester, England, Nexperia is able to provide its clients with high quality semiconductor products quickly and efficiently.On November 8, 2023, Vishay and Nexperia BV announced that they have entered into an agreement whereby Vishay will acquire Nexperia’s wafer fabrication facility and operations located in Newport, South Wales, U.K. for approximately $177,000 in cash, subject to customary post-closing adjustments. On November 8, 2023, Vishay remitted $8,750 to an escrow account as a deposit for the acquisition. Such amount is included within "Purchase of and deposits for businesses, net of cash acquired" on the consolidated statement of cash flows. To effect the transaction, Vishay will acquire a 100% interest in the legal entity Neptune 6 Limited, and its wholly-owned operating subsidiary, Nexperia Newport Limited, which owns and operates the Newport facility. The closing of the transaction is subject to U.K. government review and customary closing conditions, and is expected to occur in the first quarter of 2024.
CEO
Xuezheng Zhang (Wing)
CFO
Stefan Tilger
COO
Achim Kempe
Hamburg
Fabrication
Fab Initiation
1981
Germany
Wafer Capacity
36,000
Manchester (8-inch line)
2017
Australia
Hazelgrove
12,000
Manchester (6-inch line)
1998
22,000
Shanghai Fab
2022
China
Shanghai
Nexperia Newport
UK
Newport
34,000
RC0603FR-0710KL
Yageo
Yageo's RC0603FR-0710KL is a fixed resistor with 10000 ohm resistance, 1% tolerance, and 0.1 W power dissipation. It operates b/w -55 to 155 °C and is ideal for surface mount applications in electronics requiring precise resistance values.
1N4148WT
Jiangsu Changjiang Electronics Technology
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
NE555D
Texas Instruments
NE555D by Texas Instruments is an 8-terminal IC with a supply voltage range of 4.5V to 16V, suitable for analog waveform generation applications. It operates at temperatures from 0°C to 70°C and has a max supply current of 15mA. The package style is small outline, making it ideal for compact electronic designs.
Onsemi
1N4148WT by Onsemi is a single rectifier diode with a max output current of 0.3A and forward voltage of 0.72V. It has a small outline package style, matte tin terminal finish, and operates at temperatures up to 150°C. Ideal for applications requiring fast reverse recovery time such as power supplies and signal demodulation circuits.
CRCW040210K0FKED
Vishay Intertechnology
Vishay Intertechnology's CRCW040210K0FKED is a fixed resistor with 10000 ohm resistance, 1% tolerance, and 0.063 W power dissipation. Ideal for surface mount applications in electronics due to its compact SMT package style and high operating temperature range of -55 to 155 °C.
BAV99
Gec Plessey Semiconductors
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
SS14
Sangdest Microelectronics (Nanjing)
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Changzhou Galaxy Century Microelectronics
LL4148-GS08
Vishay Telefunken
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
2N2222A
Tesla Elektronicke Soucastky
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
MMBT3906LT1G
MMBT3906LT1G by Onsemi is a PNP BJT with VCEsat of 0.4V, hFE of 30, and fT of 250MHz. Ideal for small signal applications in electronics due to its low power dissipation, high transition frequency, and compact SOT-23 package. Suitable for use in temperature-sensitive environments with an operating range from -65°C to 150°C.
2N7002
North American Philips Discrete Products Div
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (ID): .115 A;
FDD5614P
FDD5614P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 45A IDM and 0.1 ohm RDS(ON), operating in ENHANCEMENT MODE at up to 175°C. The PLASTIC/EPOXY package with GULL WING terminals ensures efficient heat dissipation and reliable performance.
IRLML6402TRPBF
Infineon Technologies
IRLML6402TRPBF by Infineon is a P-CHANNEL FET for SWITCHING applications. It features a 20V DS Breakdown Voltage, 22A IDM, and 0.065 ohm RDS(on). With a small outline package and matte tin finish, it operates in temperatures from -55 to 150 °C.
LM2931Z-5.0G
LM2931Z-5.0G by Onsemi is a Fixed Positive Single Output LDO Regulator with 5V output voltage, 0.6V dropout voltage, and 0.1A output current. It is ideal for applications requiring stable power supply in temperature-sensitive environments due to its operating range of -40°C to 125°C.
LM317T
Linear Technology
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Terminal Form: THROUGH-HOLE; Operating Temperature (TJ-Min): 0 Cel; No. of Functions: 1; JESD-609 Code: e0;
1N4148WS
Eic Semiconductor
Good-ark Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Minilogic Device
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .001 A;
IRLML2502GTRPBF
Small Signal Field-Effect Transistors; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1; Maximum Pulsed Drain Current (IDM): 33 A; JESD-609 Code: e3; Qualification: Not Qualified;
2N7002-T
NXP Semiconductors
2N7002-T by NXP Semiconductors is a small signal N-CHANNEL FET with a min DS Breakdown Voltage of 60V and Max Drain Current of 0.3A. It is used for SWITCHING applications, operates in ENHANCEMENT MODE, and has a max operating temperature of 150°C.
T2N7002AK,LM
Toshiba
Toshiba T2N7002AK,LM is a N-CHANNEL FET with 60V DS Breakdown Voltage. Ideal for SWITCHING applications, it features SINGLE configuration with built-in diode and resistor. Operating in ENHANCEMENT MODE, it has 1W power dissipation and max temp of 150°C.
BSS138LT3
Leshan Radio
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Maximum Operating Temperature: 150 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
FDV302P
FDV302P by Onsemi is a P-CHANNEL FET with 25V DS Breakdown Voltage, 0.12A Drain Current, and 10 ohm On Resistance. Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package suitable for surface mount technology.
BSS84PWL6327
BSS84PWL6327 by Infineon is a P-CHANNEL FET with 60V DS breakdown voltage and 0.15A max drain current. Ideal for small outline applications, it features a built-in diode, 8 ohm max on resistance, and operates in enhancement mode at up to 150°C.
2N7000
Motorola
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Maximum Drain Current (Abs) (ID): .2 A; No. of Elements: 1;
BSS123LT7G
BSS123LT7G by Onsemi is a N-CHANNEL FET with 100V DS breakdown voltage, 0.17A ID, and 6 ohm RDS(on). Ideal for small outline applications requiring an enhancement mode transistor with built-in diode. Operates b/w -55 to 150 °C, making it suitable for various electronic devices.
BSS138
Taitron Components
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: 3.5 ohm; Maximum Drain Current (ID): .2 A; Peak Reflow Temperature (C): NOT SPECIFIED;
BSS138PS
Nexperia
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Package Style (Meter): SMALL OUTLINE; Minimum DS Breakdown Voltage: 60 V;
LND150N3-GP005
Supertex
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Body Material: PLASTIC/EPOXY; JESD-30 Code: O-PBCY-T3;
FDG6301N
Fairchild Semiconductor
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Terminal Position: DUAL; Package Shape: RECTANGULAR;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: 6 ohm; Minimum DS Breakdown Voltage: 50 V; Operating Mode: ENHANCEMENT MODE;
BSS123LT3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Terminal Position: DUAL; Maximum Drain Current (ID): .17 A;
NDS332P
NDS332P by Onsemi is a P-CHANNEL FET with 20V DS breakdown voltage, 1A max drain current, and 0.3 ohm max on resistance. Ideal for switching applications, it features a built-in diode in a small outline package suitable for surface mount technology. Operating at up to 150°C, this MOSFET is designed for enhancement mode operation.
FDS9431A_F085
Fairchild Semiconductor's FDS9431A_F085 is a P-CHANNEL FET with 20V DS Breakdown Voltage and 3.5A Drain Current. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a RECTANGULAR PLASTIC package. Operating at up to 150°C, this MOSFET has 0.13 ohm On Resistance and GULL WING terminals for surface mounting.
IRLML2803TRPBF-1
IRLML2803TRPBF-1 by Infineon is a N-channel FET with 30V DS breakdown voltage and 1.2A max drain current. It is used in enhancement mode applications, featuring a built-in diode and 0.25 ohm RDS(on). Ideal for small outline packages requiring high power dissipation up to 150°C.
SI2308BDS-T1-E3
SI2308BDS-T1-E3 by Vishay Intertechnology is a N-CHANNEL FET for SWITCHING applications. It has a 60V DS Breakdown Voltage, 2.3A Drain Current, and 0.156 ohm On Resistance. With an Operating Temperature range of -55 to 150 °C, it is ideal for small outline surface mount designs requiring high power dissipation.
MMBFJ113
National Semiconductor
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Qualification: Not Qualified; No. of Terminals: 3;
NTR4171PT1G
NTR4171PT1G by Onsemi is a P-CHANNEL FET with 30V DS breakdown voltage, 2.2A max drain current, and 0.075 ohm max on resistance. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 1.25W at 150°C.
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MJD32C
Power Bipolar Transistors; Maximum Time At Peak Reflow Temperature (s): 30; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1; Terminal Finish: Tin (Sn); Peak Reflow Temperature (C): 260;
PUSB3BB2DF
PNS40010ER
PSMNR51-25YLH
Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): 30; Peak Reflow Temperature (C): 260; Terminal Finish: Tin (Sn);
BUK7S0R7-40H
Power Field-Effect Transistors; Terminal Finish: Tin (Sn); Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 30; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1;
74LVC1G14GX4
INVERTER; Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au); Maximum Time At Peak Reflow Temperature (s): 30; JESD-609 Code: e4; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1;
BCP56H
Small Signal Bipolar Transistors; Moisture Sensitivity Level (MSL): 1; Maximum Time At Peak Reflow Temperature (s): 30; Peak Reflow Temperature (C): 260; JESD-609 Code: e3; Terminal Finish: Tin (Sn);
PESD3V3T1BL
BAS21TH
PMEG060T050ELPE
NCR320U
LED DISPLAY DRIVER; Terminal Finish: Tin (Sn); Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3;
74AUP1G17GX4
BUFFER; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e4; Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au); Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 30;
MJD44H11A
The Nexperia MJD44H11A is a NPN BJT transistor with VCEsat of 1V, hFE of 40, and IC of 8A. Ideal for switching applications, it has a max operating temp of 150°C and collector-emitter voltage of 80V. With a package style of small outline and surface mount capability, it offers high performance in power electronics.
NCR420Z
LED DISPLAY DRIVER; Moisture Sensitivity Level (MSL): 1; Terminal Finish: Tin (Sn); Maximum Time At Peak Reflow Temperature (s): 30; Peak Reflow Temperature (C): 260; JESD-609 Code: e3;
GAN041-650WSB
Power Field-Effect Transistors; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1; Terminal Finish: Tin (Sn);
PNE20030EP
BCP53H
Small Signal Bipolar Transistors; Terminal Finish: Tin (Sn); Moisture Sensitivity Level (MSL): 1; Maximum Time At Peak Reflow Temperature (s): 30; Peak Reflow Temperature (C): 260; JESD-609 Code: e3;
NXS0104PW-Q100
BUS TRANSCEIVER; JESD-609 Code: e4; Terminal Finish: Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag); Moisture Sensitivity Level (MSL): 1;
PMEG120G20ELR
MJD45H11
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 80 MHz; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): 8 A;
PMV65XPEAR
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Reference Standard: AEC-Q101; IEC-60134; Moisture Sensitivity Level (MSL): 1; Transistor Element Material: SILICON;
PMV65XPER
PMV65XPER by Nexperia is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 2.8A ID, 0.078 ohm RDS(on), and ENHANCEMENT MODE operation. Package style is SMALL OUTLINE with GULL WING terminals for surface mount assembly.
PMV65XP,215
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: .076 ohm; No. of Elements: 1; Moisture Sensitivity Level (MSL): 1;
PMV65XP,215 by NXP Semiconductors is a P-CHANNEL FET with 20V DS Breakdown Voltage and 3.9A Drain Current. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 0.076 ohm On Resistance. Package: PLASTIC/EPOXY, GULL WING terminals, and can handle up to 150°C temperature.
PMV60ENEAR
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Form: GULL WING;
PMV65XPE
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Element Material: SILICON; Terminal Position: DUAL;
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Finish: TIN; Operating Mode: ENHANCEMENT MODE; Terminal Form: GULL WING;
PMV65XPVL
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Maximum Drain-Source On Resistance: .074 ohm; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
PMV65XPEA
The NXP Semiconductors PMV65XPEA is a P-CHANNEL FET with 20V DS Breakdown Voltage and 2.8A ID. Ideal for SWITCHING applications, it features a 0.078 ohm Drain-Source On Resistance and operates in ENHANCEMENT MODE. This SMALL OUTLINE transistor has GULL WING terminals and is designed for surface mount configurations.
PMV65XP/MI
PMV65XP/MI by Nexperia is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. Featuring SINGLE configuration with BUILT-IN DIODE, it has 2.8A ID and 0.074 ohm RDS(on). This METAL-OXIDE SEMICONDUCTOR FET in PLASTIC/EPOXY package is ENHANCEMENT MODE operated and conforms to IEC-60134 standard.
PMV65XP
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 2.8 A; Terminal Form: GULL WING; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.92 W; Package Body Material: PLASTIC/EPOXY; Terminal Finish: Tin (Sn);
PMV65ENEAR
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Finish: TIN; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Peak Reflow Temperature (C): 260;
PMV60EN
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Peak Reflow Temperature (C): 260; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Style (Meter): SMALL OUTLINE;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Drain-Source On Resistance: .055 ohm; Maximum Drain Current (Abs) (ID): 4.7 A;
PMV65ENEA
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 3; JEDEC-95 Code: TO-236AB; Package Shape: RECTANGULAR;
PMV65UN
Small Signal Field-Effect Transistors; JESD-609 Code: e3; Terminal Finish: TIN; Moisture Sensitivity Level (MSL): 1;
PMV65UN,215
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.17 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Time At Peak Reflow Temperature (s): 30;
PMV65UNE
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Reference Standard: IEC-60134; Terminal Finish: TIN;
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