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JANTXV2N3791

New England Semiconductor

JANTXV2N3791 by New England Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 4 MHz; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 10 A;

Median Price

$152.570

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

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American Microsemiconductor Inc.

USA . 1 parts In-Stock

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$152.570

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1

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Sunrise Surplus Inc.

USA . 1 parts In-Stock

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1

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 700 parts In-Stock

1+ parts

$1.974

100+ parts

$1.796

1k+ parts

$1.619

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-

700

$1.974

$1.796

$1.619

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Microchip USA

USA . 3,930 parts In-Stock

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$165.854

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3,930

$165.854

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Component Stockers USA

USA . 199 parts In-Stock

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$660.960

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199

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Perfect Parts

USA . 25,131 parts In-Stock

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25,131

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XL Components Corporation

Australia . 6,100 parts In-Stock

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6,100

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Marpe Global Electronics

Taiwan . 2,595 parts In-Stock

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2,595

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QualityLine Systems

Poland . 1,610 parts In-Stock

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1,610

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Technical Specifications

Power Bipolar Junction Transistors (BJT) JANTXV2N3791 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from New England Semiconductor

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

30

JEDEC-95 Code:

TO-3

JESD-30 Code:

O-MBFM-P2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

150 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Reference Standard:

MIL

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

1 V

Trade Compliance

JANTXV2N3791 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

NSN

5961-01-150-4605, 5961011504605

NIIN

011504605

PCN

Manufacturer Highlights

New England Semiconductor

New England Semiconductor was founded in 1985 as a manufacturer of aerospace grade high-reliability bipolar transistors. New England Semiconductor was acquired by Microsemi in 2001. Microsemi Corporation is a semiconductor manufacturer specializing in system-engineered integrated circuits and high reliability discrete devices. A long-time supplier of high-reliability discrete components to military and aerospace customers, Microsemi today is a global supplier of high performance analog, mixed-signal integrated circuits and high reliability discrete semiconductors that manage and regulate power, protect against transient voltage spikes, and transmit, receive and amplify electronic signals.

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