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GA1L3N-T1

Nec Electronics

GA1L3N-T1 by Nec Electronics

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .1 A; Package Shape: RECTANGULAR; No. of Terminals: 3;

Median Price

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Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

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Authorized Procurement Solutions

USA . 8,000 parts In-Stock

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8,000

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Kepictronics

USA . 3,000 parts In-Stock

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3,000

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Northwest PG Solutions

USA . 1,389 parts In-Stock

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1,389

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Native Components

USA . 309 parts In-Stock

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309

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Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) GA1L3N-T1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Nec Electronics

Specs

Additional Features:

BUILT IN BIAS RESISTANCE RATIO IS 0.213

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

6000 ns

Maximum Turn On Time (ton):

200 ns

Trade Compliance

GA1L3N-T1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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