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UPA2353T1G-E4-A

Nec Electronics America

UPA2353T1G-E4-A by Nec Electronics America

N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE; Qualification: Not Qualified;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Technical Specifications

Power Field Effect Transistors (FET) UPA2353T1G-E4-A attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Nec Electronics America

Specs

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

S-PBGA-B4

No. of Elements:

2

No. of Terminals:

4

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

SQUARE

Package Style (Meter):

GRID ARRAY

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

BALL

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

UPA2353T1G-E4-A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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