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FN4L3N-A

Nec Electronics America

FN4L3N-A by Nec Electronics America

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; Terminal Form: GULL WING;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Northwest PG Solutions

USA . 1,148 parts In-Stock

1+ parts

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1k+ parts

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10k+ parts

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1,148

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Native Components

USA . 429 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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429

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Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) FN4L3N-A attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Nec Electronics America

Specs

Additional Features:

BUILT IN BIAS RESISTOR RATIO IS 2.12

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Element Material:

SILICON

Trade Compliance

FN4L3N-A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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