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2SA1006AR

Nec Electronics America

2SA1006AR by Nec Electronics America

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 80 MHz; Maximum Collector Current (IC): 1.5 A; Maximum Collector-Emitter Voltage: 200 V;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 469 parts In-Stock

1+ parts

$0.130

100+ parts

-

1k+ parts

-

10k+ parts

$0.125

469

$0.130

-

-

$0.125

Northwest PG Solutions

USA . 2,008 parts In-Stock

1+ parts

$0.143

100+ parts

-

1k+ parts

-

10k+ parts

$0.126

2,008

$0.143

-

-

$0.126

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2SA1006AR attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Nec Electronics America

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

200 V

Minimum DC Current Gain (hFE):

60

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

25 W

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

1 V

Trade Compliance

2SA1006AR Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

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