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NDP608AE

National Semiconductor

NDP608AE by National Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 100 W; Operating Mode: ENHANCEMENT MODE; Terminal Form: THROUGH-HOLE;

Median Price

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Lifecycle Status

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In-Stock Inventory

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USA . 1,385 parts In-Stock

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Technical Specifications

Power Field Effect Transistors (FET) NDP608AE attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from National Semiconductor

Specs

Configuration:

Minimum DS Breakdown Voltage:

80 V

Maximum Drain Current (Abs) (ID):

36 A

Maximum Drain Current (ID):

36 A

Maximum Drain-Source On Resistance:

.042 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

100 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Element Material:

SILICON

Trade Compliance

NDP608AE Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

National Semiconductor

National Semiconductor was an American semiconductor manufacturer which specialized in analog devices and subsystems, formerly with headquarters in Santa Clara, California. The company produced power management integrated circuits, display drivers, audio and operational amplifiers, communication interface products and data conversion solutions. National's key markets included wireless handsets, displays and a variety of broad electronics markets, including medical, automotive, industrial and test and measurement applications.On September 23, 2011, the company formally became part of Texas Instruments as the "Silicon Valley" division.

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