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MMFT3055VT3

Motorola

MMFT3055VT3 by Motorola

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; No. of Elements: 1; Minimum DS Breakdown Voltage: 60 V;

Median Price

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Lifecycle Status

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Technical Specifications

Small Signal Field Effect Transistors (FET) MMFT3055VT3 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Motorola

Specs

Additional Features:

AVALANCHE RATED

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (Abs) (ID):

1.7 A

Maximum Drain Current (ID):

1.7 A

Maximum Drain-Source On Resistance:

.13 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

50 pF

JEDEC-95 Code:

TO-261AA

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

.9 W

Maximum Power Dissipation (Abs):

2 W

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MMFT3055VT3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

Manufacturer Highlights

Motorola

Motorola Solutions, Inc., is an American video equipment, telecommunications equipment, software, systems and services provider that succeeded Motorola, Inc., following the spinoff of the mobile phone division into Motorola Mobility in 2011. The company is headquartered in Chicago, Illinois.

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