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MLD1N06CLT4

Motorola

MLD1N06CLT4 by Motorola

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR, DIODE AND RESISTOR; Surface Mount: YES; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY; Terminal Position: SINGLE;

Median Price

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Lifecycle Status

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Technical Specifications

Power Field Effect Transistors (FET) MLD1N06CLT4 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Motorola

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE, ESD PROTECTED

Avalanche Energy Rating (EAS):

80 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

59 V

Maximum Drain Current (ID):

1 A

Maximum Drain-Source On Resistance:

.75 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSSO-G2

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

40 W

Maximum Pulsed Drain Current (IDM):

1.8 A

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

11 ns

Maximum Turn On Time (ton):

8 ns

Trade Compliance

MLD1N06CLT4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Motorola

Motorola Solutions, Inc., is an American video equipment, telecommunications equipment, software, systems and services provider that succeeded Motorola, Inc., following the spinoff of the mobile phone division into Motorola Mobility in 2011. The company is headquartered in Chicago, Illinois.

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