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MGSF1P02ELT3

Motorola

MGSF1P02ELT3 by Motorola

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .4 W; Operating Mode: ENHANCEMENT MODE; Maximum Drain-Source On Resistance: .26 ohm;

Median Price

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Lifecycle Status

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In-Stock Inventory

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Vyrian

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Advanced Electronics

New Zealand . 800 parts In-Stock

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SupplyDigital Components

Austria . 5,416 parts In-Stock

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TANS Electronics

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Kulean Microsystems

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Corohmni

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UHIMA Technologies

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Technical Specifications

Small Signal Field Effect Transistors (FET) MGSF1P02ELT3 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Motorola

Specs

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

.75 A

Maximum Drain Current (ID):

.75 A

Maximum Drain-Source On Resistance:

.26 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MGSF1P02ELT3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Motorola

Motorola Solutions, Inc., is an American video equipment, telecommunications equipment, software, systems and services provider that succeeded Motorola, Inc., following the spinoff of the mobile phone division into Motorola Mobility in 2011. The company is headquartered in Chicago, Illinois.

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