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APT10090BLLE3

Microsemi

APT10090BLLE3 by Microsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain Current (ID): 12 A; Maximum Drain-Source On Resistance: .95 ohm; Minimum DS Breakdown Voltage: 1000 V;

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< 1k

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France . 7,070 parts In-Stock

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LOOK Integrated Logistics

Peru . 5,230 parts In-Stock

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LMD Electronica

Estonia . 2,795 parts In-Stock

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NIA Electronics

USA . 2,748 parts In-Stock

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Montano Global Distributors

Canada . 881 parts In-Stock

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Technical Specifications

Power Field Effect Transistors (FET) APT10090BLLE3 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Microsemi

Specs

Avalanche Energy Rating (EAS):

1210 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

1000 V

Maximum Drain Current (ID):

12 A

Maximum Drain-Source On Resistance:

.95 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

48 A

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

APT10090BLLE3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Microsemi

Microsemi Corporation, a wholly owned subsidiary of Microchip Technology Inc. (Nasdaq: MCHP), offers a comprehensive portfolio of semiconductor and system solutions for communications, defense & security, aerospace and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and synchronization devices and precise time solutions, setting the world's standard for time; voice processing devices; RF solutions; discrete components; enterprise storage and communication solutions, security technologies and scalable anti-tamper products; Ethernet solutions; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso Viejo, California.

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