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1N5190/TR

Microsemi

1N5190/TR by Microsemi

1N5190/TR by Microsemi is a single rectifier diode with 600V peak reverse voltage and 3A output current. It has a fast recovery time of 0.4us, making it ideal for applications requiring high-speed switching. The diode is housed in an elliptical plastic/epoxy package and features tin lead terminal finish for easy installation in various electronic circuits.

Median Price

$7.753

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 1,300 parts In-Stock

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Vyrian

USA . 7,605 parts In-Stock

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VNN

France . 2,927 parts In-Stock

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Ampacity Inc.

Singapore . 1,123 parts In-Stock

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$0.010

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Continental Prestige Electronics

USA . 13,149 parts In-Stock

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Netroflash

USA . 2,050 parts In-Stock

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AZTECH Wire

Italy . 858 parts In-Stock

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$17.122

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Microchip USA

USA . 6,022 parts In-Stock

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$23.180

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$22.850

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$22.690

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$22.520

6,022

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$22.520

QUARKTWIN TECHNOLOGY LTD

USA . 8,643 parts In-Stock

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Argo Parts USA

USA . 6,078 parts In-Stock

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Overview

Experience superior quality and reliability with the 1N5190/TR by Microsemi. This fast recovery rectifier diode offers exceptional performance and durability, making it ideal for a wide range of applications. From power supplies to industrial controls, this product delivers high output current and peak reverse voltage, ensuring optimal functionality and efficiency. Trust Microsemi's expertise in diodes & rectifiers to enhance your projects with this top-of-the-line component. Upgrade your systems today and enjoy the benefits of cutting-edge technology at your fingertips.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body enhances durability and makes the diode lightweight, ideal for portable electronic devices.

Config: SINGLE

The single configuration simplifies circuit design and installation, making it easier for users to integrate into various systems.

Maximum Reverse Recovery Time: 0.4 us

With a fast reverse recovery time of 0.4 microseconds, this diode efficiently minimizes switching losses and improves overall system efficiency.

Package Shape: ELLIPTICAL

The elliptical shape of the package offers a compact design, saving space in electronic assemblies and facilitating easier placement on PCBs.

No. of Terminals: 2

Having only two terminals simplifies the connection process, reducing the chances of wiring errors and making installation hassle-free.

Package Style (Meter): LONG FORM

The long form package style provides better heat dissipation and improved thermal performance, increasing the diode's reliability and longevity.

Application: FAST RECOVERY

Designed for fast recovery applications, this diode ensures rapid response times and efficient operation in high-speed electronic circuits.

Terminal Finish: TIN LEAD

The tin lead terminal finish enhances solderability, ensuring a secure connection and reliable performance in various operating conditions.

Terminal Position: AXIAL

The axial terminal position allows for straightforward mounting and alignment, simplifying the installation process for users.

Case Connection: ISOLATED

The isolated case connection enhances safety by providing electrical insulation, reducing the risk of short circuits and improving overall system reliability.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this product is ideal for converting AC to DC, making it suitable for power supply applications and voltage regulation.

Maximum Output Current: 3 A

With a maximum output current of 3 amperes, this diode can handle moderate power levels, making it suitable for a wide range of electronic devices.

Terminal Form: WIRE

The wire terminal form offers flexibility in connection options and makes it easier to integrate the diode into different circuit designs.

Maximum Repetitive Peak Reverse Voltage: 600 V

The high maximum repetitive peak reverse voltage of 600 volts ensures reliable performance in high-voltage applications, making it suitable for a wide range of power supply setups.

Maximum Non-Repetitive Peak Forward Current: 80 A

With a maximum non-repetitive peak forward current of 80 amperes, this diode can handle short-term high current surges, making it suitable for power electronics applications.

Diode Element Material: SILICON

The silicon material used in the diode element offers high conductivity and temperature stability, ensuring consistent performance and reliability in demanding operating conditions.

Technical Specifications

Diodes & Rectifiers 1N5190/TR attributes and parameters. Explore more Diodes & Rectifiers devices from Microsemi

Specs

Application:

FAST RECOVERY

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

JESD-30 Code:

E-PALF-W2

JESD-609 Code:

e0

Maximum Non Repetitive Peak Forward Current:

80 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Output Current:

3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

600 V

Maximum Reverse Recovery Time:

.4 us

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

1N5190/TR Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Microsemi

Microsemi Corporation, a wholly owned subsidiary of Microchip Technology Inc. (Nasdaq: MCHP), offers a comprehensive portfolio of semiconductor and system solutions for communications, defense & security, aerospace and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and synchronization devices and precise time solutions, setting the world's standard for time; voice processing devices; RF solutions; discrete components; enterprise storage and communication solutions, security technologies and scalable anti-tamper products; Ethernet solutions; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso Viejo, California.

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