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1N5181

STMicroelectronics

1N5181 by STMicroelectronics

1N5181 by STMicroelectronics is a single rectifier diode with 5us reverse recovery time, 175 °C max temp, and 4000V peak reverse voltage. It has a VF of 10V and 0.1A output current. Commonly used in power supply circuits for voltage regulation.

Median Price

$8.150

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

American Microsemiconductor Inc.

USA . 1 parts In-Stock

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$8.150

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Digiode

USA . 3,978 parts In-Stock

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Anansix

USA . 2,001 parts In-Stock

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M&R Communications

USA . 1,000 parts In-Stock

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Flip Electronics

USA . 180 parts In-Stock

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180

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Vyrian

USA . 110 parts In-Stock

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110

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Component Electronics Inc.

Canada . 68 parts In-Stock

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Prism Electronics

USA . 56 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 25 parts In-Stock

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Resion

USA . 1 parts In-Stock

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IDEA Electronic Components Group

UK . 18 parts In-Stock

1+ parts

$0.016

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$0.014

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18

$0.016

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$0.014

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MKK Technologies

India . 1,593 parts In-Stock

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$0.029

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$0.029

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DigiPath Technology Company

USA . 1,593 parts In-Stock

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$0.029

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$0.029

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Advanced Electronics

New Zealand . 650 parts In-Stock

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$0.059

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$0.054

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$0.048

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650

$0.059

$0.054

$0.048

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Native Components

USA . 300 parts In-Stock

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$5.304

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$5.304

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Corohmni

South Africa . 51 parts In-Stock

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$47.210

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Component Stockers USA

USA . 66 parts In-Stock

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$635.780

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Corphita

USA . 4,400 parts In-Stock

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Microchip USA

USA . 3,780 parts In-Stock

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Parana Technologies

USA . 1,828 parts In-Stock

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$0.019

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$0.019

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RGB Technical Solutions

Ukraine . 1,463 parts In-Stock

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1,463

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Northwest PG Solutions

USA . 675 parts In-Stock

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$5.198

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675

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Perfect Parts

USA . 63 parts In-Stock

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63

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Overview

Unleash the power of reliable performance with the 1N5181 by STMicroelectronics. Crafted by a trusted manufacturer in the industry, this RECTIFIER DIODE offers unparalleled quality and efficiency for a wide range of applications. With a maximum output current of 0.1 A and a maximum repetitive peak reverse voltage of 4000 V, this diode ensures seamless operation even in challenging conditions. Trust in STMicroelectronics to deliver exceptional value and peace of mind with the 1N5181.

Feature Benefit Bullets

Maximum Reverse Recovery Time: 5 us

The short reverse recovery time of 5 us ensures efficient and fast switching, reducing power losses and improving overall performance of the diode.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature of 175 °C, this diode can withstand higher temperatures without compromising its functionality, making it suitable for a wide range of applications.

Terminal Finish: Tin/Lead (Sn/Pb)

The tin/lead terminal finish provides good solderability and ensures reliable electrical connections, making this diode easy to work with during installation.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this product is specifically designed for converting alternating current (AC) to direct current (DC), making it ideal for power supply applications and electronic circuits.

Maximum Forward Voltage (VF): 10 V

The low maximum forward voltage of 10 V results in minimal voltage drop across the diode when conducting, leading to improved efficiency and reduced power dissipation.

Maximum Output Current: 0.1 A

With a maximum output current of 0.1 A, this diode can handle moderate current levels, making it suitable for various low-power applications such as signal processing and voltage regulation.

Maximum Repetitive Peak Reverse Voltage: 4000 V

The high maximum repetitive peak reverse voltage of 4000 V ensures reliable reverse voltage protection, making this diode ideal for high-voltage applications where robustness is crucial.

Technical Specifications

Diodes & Rectifiers 1N5181 attributes and parameters. Explore more Diodes & Rectifiers devices from STMicroelectronics

Specs

Config:

SINGLE

Diode Type:

Maximum Forward Voltage (VF):

10 V

JESD-609 Code:

e0

No. of Elements:

1

No. of Phases:

1

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

.1 A

Maximum Repetitive Peak Reverse Voltage:

4000 V

Maximum Reverse Recovery Time:

5 us

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Trade Compliance

1N5181 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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