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MTFC16GAKAECN-2MWT

Micron Technology

MTFC16GAKAECN-2MWT by Micron Technology

Micron Technology's MTFC16GAKAECN-2MWT is a secondary storage controller with 153 terminals, operating at 1.65-1.95V and up to 85°C. Featuring a very thin profile package style, it offers an external data bus width of 8 bits and supports flash memory drives with a max transfer rate of 250 MBps.

Median Price

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Lifecycle Status

Suppliers In-Stock

7

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1k+

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Vyrian

USA . 5,451 parts In-Stock

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Digiode

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Chip Stock

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Nova Conductors

Japan . 300 parts In-Stock

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Netsource Technology, Inc.

USA . 62 parts In-Stock

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Amalfi Trading

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Cyclops Electronics Ltd

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AZTECH Wire

Italy . 693 parts In-Stock

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Corohmni

South Africa . 164 parts In-Stock

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A-Z Elektronik GmbH

Germany . 7,433 parts In-Stock

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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Corphita

USA . 641 parts In-Stock

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Microchip USA

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Kepictronics

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SIE Connect GmbH (Excess)

Germany . 79 parts In-Stock

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Aranea Global

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Overview

Experience the next level of storage performance with Micron Technology's MTFC16GAKAECN-2MWT Secondary Storage Controller. Designed with cutting-edge technology and superior craftsmanship, this flash memory drive offers lightning-fast data transfer rates, maximum reliability, and seamless integration for a wide range of applications. Whether you're a gaming enthusiast, creative professional, or business user, this product delivers unmatched value and efficiency. Upgrade your storage solution today and conquer every task with ease.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes the product lightweight and durable, ensuring it can withstand everyday use and transportation without risk of damage.

Maximum Supply Voltage: 1.95 V

The high maximum supply voltage allows for efficient power management and flexibility in usage, catering to a wide range of applications and variable power requirements.

Minimum Supply Voltage: 1.65 V

The low minimum supply voltage ensures energy efficiency and helps in reducing power consumption, making it an environmentally friendly and cost-effective choice.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this product can function reliably in varying environmental conditions, providing stable performance even in elevated temperatures.

Peripheral IC Type: SECONDARY STORAGE CONTROLLER, FLASH MEMORY DRIVE

The integration of a secondary storage controller and flash memory drive in one peripheral IC offers the advantage of enhanced storage capabilities and efficient data management in a single device.

Maximum Host Data Transfer Rate: 250 MBps

The high maximum host data transfer rate ensures fast and efficient data transmission, reducing latency and improving overall system performance for seamless user experience.

Technical Specifications

Secondary Storage Controllers MTFC16GAKAECN-2MWT attributes and parameters. Explore more Secondary Storage Controllers devices from Micron Technology

Specs

Additional Features:

IT ALSO OPERATES AT 2.7V TO 3.6 V

External Data Bus Width:

8

Maximum Host Data Transfer Rate:

250 MBps

JESD-30 Code:

R-PBGA-B153

JESD-609 Code:

e1

Length:

13 mm

No. of Terminals:

153

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-25 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Maximum Seated Height:

1 mm

Maximum Supply Voltage:

1.95 V

Minimum Supply Voltage:

1.65 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

BOTTOM

Width:

11.5 mm

Trade Compliance

MTFC16GAKAECN-2MWT Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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