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MTFC32GAKAECN-3MWT

Micron Technology

MTFC32GAKAECN-3MWT by Micron Technology

Micron Technology's MTFC32GAKAECN-3MWT is a secondary storage controller with 153 terminals, operating voltage range of 1.65V to 1.95V, and max data transfer rate of 250MBps. Ideal for flash memory drives, it features a very thin profile package style and CMOS technology for efficient performance in various applications.

Median Price

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Lifecycle Status

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4

In-Stock Inventory

1k+

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Cyclops Electronics Ltd

UK . 874 parts In-Stock

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Vyrian

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Nova Conductors

Japan . 500 parts In-Stock

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Digiode

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Ampacity Inc.

Singapore . 297 parts In-Stock

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Corohmni

South Africa . 3,191 parts In-Stock

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A-Z Elektronik GmbH

Germany . 7,040 parts In-Stock

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Continental Prestige Electronics

USA . 4,512 parts In-Stock

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Authorized Procurement Solutions

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Corphita

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Argo Parts USA

USA . 556 parts In-Stock

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Aranea Global

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Kepictronics

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Overview

Discover the ultimate solution for your secondary storage needs with the MTFC32GAKAECN-3MWT by Micron Technology. Known for their superior quality and cutting-edge technology, Micron offers a top-of-the-line flash memory drive that delivers high performance and reliability. Ideal for a wide range of applications, this product provides customers with unmatched value, speed, and efficiency. Upgrade to Micron Technology and experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the product lightweight and durable, ideal for portable and long-lasting storage solutions.

Surface Mount: YES

Being surface mountable allows for easy integration onto circuit boards, saving space and simplifying installation.

Maximum Supply Voltage: 1.95 V

The higher maximum supply voltage provides flexibility in power requirements and compatibility with various systems.

Package Shape: RECTANGULAR

The rectangular package shape is commonly used and easy to integrate into existing designs and layouts.

No. of Terminals: 153

The large number of terminals allows for a wide range of connections and capabilities, enabling versatile functionality.

Package Style (Meter): GRID ARRAY, VERY THIN PROFILE, FINE PITCH

The grid array style with a thin profile and fine pitch design is space-saving and efficient for high-density applications.

Minimum Supply Voltage: 1.65 V

The low minimum supply voltage ensures efficient power usage and compatibility with various power sources.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, the product can withstand extended use in various environments without overheating.

Minimum Operating Temperature: -25 °C

The low minimum operating temperature ensures reliable performance even in cold conditions, making it suitable for a wide range of applications.

Terminal Finish: TIN SILVER COPPER

The terminal finish of tin, silver, and copper provides excellent conductivity and corrosion resistance for long-term reliability.

Terminal Position: BOTTOM

Having terminals positioned at the bottom simplifies the integration process and ensures secure connections within the system.

Maximum Seated Height: 1 mm

The low maximum seated height allows for a compact design and easy installation in space-constrained environments.

Width: 11.5 mm

The moderate width of the product enables compatibility with standard spacing requirements and allows for easy integration into various systems.

External Data Bus Width: 8

An external data bus width of 8 provides ample bandwidth for efficient data transfer and processing, enhancing overall system performance.

Length: 13 mm

The length of 13 mm offers a balance between compact size and functionality, making it suitable for a wide range of applications.

Peripheral IC Type: SECONDARY STORAGE CONTROLLER, FLASH MEMORY DRIVE

The peripheral IC type combines secondary storage controller and flash memory drive functions, offering comprehensive storage capabilities in a single package.

Technology: CMOS

Utilizing CMOS technology ensures low power consumption and compatibility with modern systems, enhancing efficiency and performance.

Terminal Form: BALL

The ball terminal form provides secure connections and efficient heat dissipation, ensuring reliable performance under various conditions.

Maximum Host Data Transfer Rate: 250 MBps

With a high maximum host data transfer rate of 250 MBps, the product enables fast and efficient data exchange, improving overall system productivity.

Terminal Pitch: 0.5 mm

The small terminal pitch of 0.5 mm allows for high-density packaging and efficient signal transmission, optimizing system performance.

Technical Specifications

Secondary Storage Controllers MTFC32GAKAECN-3MWT attributes and parameters. Explore more Secondary Storage Controllers devices from Micron Technology

Specs

Additional Features:

IT ALSO OPERATES AT 2.7V TO 3.6 V

External Data Bus Width:

8

Maximum Host Data Transfer Rate:

250 MBps

JESD-30 Code:

R-PBGA-B153

JESD-609 Code:

e1

Length:

13 mm

No. of Terminals:

153

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-25 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Maximum Seated Height:

1 mm

Maximum Supply Voltage:

1.95 V

Minimum Supply Voltage:

1.65 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

BOTTOM

Width:

11.5 mm

Trade Compliance

MTFC32GAKAECN-3MWT Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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