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TN2501N8-G

Microchip Technology

TN2501N8-G by Microchip Technology

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Operating Mode: ENHANCEMENT MODE; Moisture Sensitivity Level (MSL): 1;

Median Price

$1.400

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 491 parts In-Stock

1+ parts

$0.641

100+ parts

$0.604

1k+ parts

$0.603

10k+ parts

-

491

$0.641

$0.604

$0.603

-

Mouser Electronics

USA . 1,850 parts In-Stock

1+ parts

$1.630

100+ parts

$1.250

1k+ parts

$1.100

10k+ parts

$1.090

1,850

$1.630

$1.250

$1.100

$1.090

Verical

USA . 1,700 parts In-Stock

1+ parts

-

100+ parts

$1.556

1k+ parts

$1.335

10k+ parts

-

1,700

-

$1.556

$1.335

-

Master Electronics

USA . 1,700 parts In-Stock

1+ parts

-

100+ parts

$1.244

1k+ parts

$1.122

10k+ parts

$1.111

1,700

-

$1.244

$1.122

$1.111

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IBS Electronics

USA . 1,700 parts In-Stock

1+ parts

-

100+ parts

$2.126

1k+ parts

$1.269

10k+ parts

$0.984

1,700

-

$2.126

$1.269

$0.984

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Kepictronics

USA . 27,860 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

27,860

-

-

-

-

RGB Technical Solutions

Ukraine . 7,423 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,423

-

-

-

-

Authorized Procurement Solutions

USA . 6,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,500

-

-

-

-

Technical Specifications

Power Field Effect Transistors (FET) TN2501N8-G attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Microchip Technology

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE, LOW THRESHOLD

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

18 V

Maximum Drain Current (ID):

.4 A

Maximum Drain-Source On Resistance:

2.5 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

35 pF

JEDEC-95 Code:

TO-243AA

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

.56 A

Qualification:

Not Qualified

Reference Standard:

TS 16949

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

23 ns

Maximum Turn On Time (ton):

20 ns

Trade Compliance

TN2501N8-G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

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Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

Category top products 20

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