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JANTXV1N5297-1

Microchip Technology

JANTXV1N5297-1 by Microchip Technology

JANTXV1N5297-1 by Microchip Tech is a single current regulator diode with 1mA nominal regulation current. It has an isolated case connection, operates at 1.35V max limiting voltage, and uses silicon as the diode element material. This diode is designed for applications requiring precise current control in military and aerospace electronics.

Median Price

$34.360

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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Microchip Technology

USA . 67 parts In-Stock

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$34.360

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American Microsemiconductor Inc.

USA . 1 parts In-Stock

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$101.960

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Vyrian

USA . 7,167 parts In-Stock

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Nova Conductors

Japan . 500 parts In-Stock

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NexGen Digital

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Mil-Aero Solutions, Inc.

USA . 5 parts In-Stock

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Corohmni

South Africa . 753 parts In-Stock

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$0.040

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753

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Aztec Data Supply Inc.

USA . 260 parts In-Stock

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$0.069

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AZTECH Wire

Italy . 442 parts In-Stock

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$13.451

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Microchip USA

USA . 7,994 parts In-Stock

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$84.663

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QUARKTWIN TECHNOLOGY LTD

USA . 13,046 parts In-Stock

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XL Components Corporation

Australia . 8,387 parts In-Stock

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QualityLine Systems

Poland . 6,207 parts In-Stock

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Argo Parts USA

USA . 2,467 parts In-Stock

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Aranea Global

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Marpe Global Electronics

Taiwan . 800 parts In-Stock

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Continental Prestige Electronics

USA . 433 parts In-Stock

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Overview

Enhance your electronic designs with the reliable JANTXV1N5297-1 by Microchip Technology. As a leading manufacturer in the industry, Microchip Technology guarantees top-notch quality and performance. The Current Regulator Diode category offers precise regulation, ensuring stable current flow for your applications. With its efficient design and durable construction, the JANTXV1N5297-1 is the perfect choice for your projects. Upgrade your circuits today and experience the benefits of this exceptional product.

Feature Benefit Bullets

Config: SINGLE

Single configuration simplifies installation and reduces complexity when using this current regulator diode.

Package Shape: ROUND

Round package shape allows for easy mounting and integration into various electronic circuits.

Nominal Regulation Current (Ireg): 1 mA

Provides precise regulation of current at 1 mA, ensuring stability in the circuit operation.

No. of Terminals: 2

With only 2 terminals, this current regulator diode is easy to connect and requires minimal wiring.

Package Style (Meter): LONG FORM

Long form package style provides additional protection and durability, suitable for various environmental conditions.

Terminal Finish: TIN LEAD

Tin Lead terminal finish ensures good conductivity and reliable connection in the circuit.

Terminal Position: AXIAL

Axial terminal position facilitates easy installation and connection in the circuit layout.

Case Connection: ISOLATED

Isolated case connection enhances safety and prevents leakage currents in the circuit.

Maximum Power Dissipation: 0.5 W

With a maximum power dissipation of 0.5 W, this current regulator diode can handle moderate power loads efficiently.

Reference Standard: MIL-19500/463

Compliance with MIL-19500/463 standard ensures high quality and reliability in performance.

Diode Type: CURRENT REGULATOR DIODE

Specifically designed as a current regulator diode, ensuring accurate and stable current regulation in the circuit.

Technology: FIELD EFFECT

Utilizes field effect technology for efficient current regulation and low power consumption.

Terminal Form: WIRE

Wire terminal form allows for easy connection and flexibility in circuit layout.

Maximum Limiting Voltage: 1.35 V

Maximum limiting voltage of 1.35 V protects the circuit from voltage spikes and overloads.

Diode Element Material: SILICON

Silicon diode element material offers high reliability and stability in current regulation applications.

Technical Specifications

Current Regulator Diodes JANTXV1N5297-1 attributes and parameters. Explore more Current Regulator Diodes devices from Microchip Technology

Specs

Additional Features:

METALLURGICALLY BONDED

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-35

JESD-30 Code:

O-XALF-W2

JESD-609 Code:

e0

Maximum Limiting Voltage:

1.35 V

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

UNSPECIFIED

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.5 W

Qualification:

Qualified

Reference Standard:

MIL-19500/463

Nominal Regulation Current (Ireg):

1 mA

Surface Mount:

NO

Technology:

FIELD EFFECT

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

JANTXV1N5297-1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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