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JANTX2N2907AUA

Microchip Technology

JANTX2N2907AUA by Microchip Technology

JANTX2N2907AUA by Microchip is a PNP BJT transistor with 4 terminals, hFE of 100, and max. VCE of 60V. Ideal for switching applications with max. IC of 0.6A and operating temp. up to 200°C. Surface mountable in small outline package style, it offers fast turn on/off times for efficient performance.

Median Price

$19.130

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

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Arrow

USA . 7 parts In-Stock

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Verical

USA . 7 parts In-Stock

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Adafruit Industries

USA . 3,000 parts In-Stock

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$21.934

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$20.837

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$20.837

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$21.934

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Chip1Stop

Japan . 8 parts In-Stock

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Nova Conductors

Japan . 50 parts In-Stock

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$22.344

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American Microsemiconductor Inc.

USA . 27 parts In-Stock

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$126.890

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Vyrian

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NexGen Digital

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Resion

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Sunrise Surplus Inc.

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Q Components

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LWI Electronics Inc

India . 3 parts In-Stock

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Inland Empire Components Inc.

USA . 3 parts In-Stock

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Electronics Depot

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Aztec Data Supply Inc.

USA . 3,421 parts In-Stock

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$1.693

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$1.693

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Semicontronic

India . 510 parts In-Stock

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$9.630

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$9.389

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$9.341

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510

$9.630

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Corohmni

South Africa . 1,008 parts In-Stock

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$21.295

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Aranea Global

USA . 1,000 parts In-Stock

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$21.898

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$21.022

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$21.898

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Advanced Electronics

New Zealand . 3,000 parts In-Stock

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$21.934

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$20.837

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$20.837

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$21.934

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Continental Prestige Electronics

USA . 2,058 parts In-Stock

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$22.344

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$21.898

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QUARKTWIN TECHNOLOGY LTD

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Fulton Briggs Corp.

USA . 7,933 parts In-Stock

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Authorized Procurement Solutions

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Microchip USA

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Argo Parts USA

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Infinite Electronics LLP (Excess)

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Eliminating Global Boundries, Inc

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Overview

Enhance your electronic projects with the JANTX2N2907AUA by Microchip Technology, a high-quality Small Signal Bipolar Junction Transistor. Manufactured by the trusted name in technology, this PNP transistor is perfect for switching applications and offers reliable performance. With a maximum power dissipation of 0.4W and a maximum collector-emitter voltage of 60V, this transistor is designed to meet your needs. Upgrade your designs with the JANTX2N2907AUA and experience superior quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this transistor lightweight and cost-effective.

Polarity or Channel Type: PNP

PNP configuration allows for high power gain and low noise operation in switching applications.

Configuration: SINGLE

Single configuration simplifies circuit design and assembly process.

Transistor Application: SWITCHING

Specifically designed for switching applications, ensuring reliable performance and efficiency.

Surface Mount: YES

Surface mount capability enables easy integration onto PCBs, saving space and improving reliability.

Package Shape: RECTANGULAR

Rectangular shape allows for easier placement and soldering on PCBs.

Terminal Form: NO LEAD

No lead terminal form makes it suitable for lead-free manufacturing processes.

No. of Terminals: 4

4 terminals provide necessary connections for different circuit configurations.

Maximum Power Dissipation (Abs): 0.4 W

A high maximum power dissipation rating ensures the transistor can handle high power levels without overheating.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space in compact electronic devices.

Minimum DC Current Gain (hFE): 100

High minimum DC current gain ensures stable and consistent performance in various operating conditions.

Maximum Operating Temperature: 200 °C

Wide operating temperature range allows for use in diverse environmental conditions.

Maximum Collector-Emitter Voltage: 60 V

High collector-emitter voltage rating provides flexibility for different voltage requirements.

Transistor Element Material: SILICON

Silicon element material ensures reliable and durable performance over an extended period of time.

Maximum Turn On Time (ton): 45 ns

Quick turn-on time makes this transistor suitable for fast switching applications.

Maximum Collector Current (IC): 0.6 A

High maximum collector current rating allows for handling of larger currents without damage.

Maximum Turn Off Time (toff): 300 ns

Fast turn-off time ensures efficient switching operation.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides good solderability and reliability in various operating conditions.

Terminal Position: DUAL

Dual terminal position allows for flexibility in circuit design and layout.

Reference Standard: MIL-19500/291

Compliance with MIL-19500/291 standard ensures high quality and reliability for military and aerospace applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) JANTX2N2907AUA attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Microchip Technology

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PDSO-N4

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

200 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Qualified

Reference Standard:

MIL-19500/291

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

300 ns

Maximum Turn On Time (ton):

45 ns

Trade Compliance

JANTX2N2907AUA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

NSN

5961-01-452-8366, 5961014528366, 5961-01-406-5929, 5961014065929

NIIN

014528366, 014065929

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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